International Business Machines Corporation

Micron Technology Incorporated

Sandisk Technologies Inc.

Western Digital Technologies, Inc.

Hua Fang Tan

He H Liu

Zhong Xian Li

Shao Chun Li

Steven M Kagan

Kathryn Allyn Bassin

Susan Eileen Skrabanek

Jian Ding

Sheng Huang

Jun Zhu

Howard M Hess

Li Wang

Hope Chiu

Susan E Smith

Weiting Jiang

Simon Dong

Jerry Tang

He Huang

Hui Calvin Yang

Antonino Pollio

Nicola Colella

Junjun Wang

Bo Zhou

Yingying Zhu

Elley Zhang

Kent Yang

Jingxun Eric Wu

Rosy Zhao

Jian Xu

Krishna Chaitanya Ratakonda

Wei Zhao

Deping He

Chin-Tien Chiu

Jia Tao Li

Cong Zhang

Naomi Meiko Mitsumori

Wei Zhu

Rui Guo

Fen Yu

Shih-Gong Li

Shenghua Huang

Xinyu Wang

Xiaohui Wang

Yanming Liu

De Hua Guo

Wenjing Chen

Fangwen Zhou

Jun Jun Wang

Guocheng Zhong

Dongpeng Xue

Huirong Zhang

Lingye Zhou

Yuequan Shi

Donghua Wu

Haiyue Shen

A semiconductor device package includes a multi-layer substrate including a bottom layer and a top layer. One or more dies are mounted on and electrically coupled to the top layer of the substrate. An electromagnetic interference (EMI) shield encapsulates the substrate and the semiconductor dies. A first plurality of conductive stubs is positioned around edges of the top layer of the substrate. Each of the conductive stubs includes an edge portion having a first thickness and in contact with the EMI shield. A second plurality of conductive stubs is positioned around edges of the bottom layer of the substrate. Each of the second plurality of conductive stubs includes an edge portion having a second thickness less than the first thickness and in contact with the EMI shield.

Semiconductor device package having improved conductive stub coverage

A semiconductor wafer includes semiconductor dies and laser grooves formed in the scribe lines along the long edges of the semiconductor dies. A laser groove extends between the long edges of two adjacent semiconductor dies to encompass the corners of the two adjacent semiconductor dies. When diced, the resulting semiconductor dies have portions of the corners removed.

Semiconductor wafer and semiconductor dies formed therefrom including grooves along long edges of the semiconductor dies

Methods, systems, and devices for dynamic voltage supply for memory circuit are described. An apparatus may adjust a supply voltage based on a process corner and a temperature of the memory system. An apparatus may include a memory array and a controller. The controller may determine a first temperature of the apparatus is less than a first temperature threshold at a first time. The controller may transition a voltage supplied to the controller from a first voltage level to a second voltage level based on determining the first temperature is less than the first temperature threshold. The controller may determine a second temperature is greater than a second temperature threshold at a second time. The controller may transition the voltage supplied to the controller from the second voltage level to the first voltage level based on determining the second temperature is greater than the second temperature threshold.

Dynamic voltage supply for memory circuit

A semiconductor package includes a substrate having a top planar surface and a semiconductor die mounted on the top planar surface of the substrate. Bond wires electrically connect the semiconductor die to the substrate. Flow control dams are integrally formed with the top planar surface of the substrate and each flow control dam protrudes from the top planar surface of the substrate at a location proximate to the bond wires. The flow control dams reduce the occurrence of wire sweep in the bond wires electrically connected to the substrate and semiconductor die.

Semiconductor device package mold flow control system and method

A semiconductor memory package includes a substrate, a first stack of memory dies, and a second stack of memory dies. The first stack of memory dies includes a first substack of staggered memory dies offset with respect to each other in a first direction and a second substack of staggered memory dies offset with respect to each other in the first direction and positioned above the first substack. The second stack of memory dies includes a third substack of staggered memory dies offset with respect to each other in a second direction and a fourth substack of staggered memory dies offset with respect to each other in the second direction and positioned above the third substack. The top memory die of the first substack and a memory die positioned below the top memory die of the third substack are at least partially coplanar.

Semiconductor device with unbalanced die stackup

Methods, systems, and devices for two-stage buffer operations supporting write commands are described. If data is written to a memory device starting at a multi-plane page offset other than zero, the read performance for the data may decrease significantly due to die misalignment. To avoid die misalignment, a memory system may support two buffers for write data: a flush buffer and a temporary buffer. The memory system may determine whether to add received data to the flush buffer, the temporary buffer, or a combination thereof based on a data transfer size and a threshold size. If the data in the temporary buffer satisfies a copy condition, the data in the temporary buffer is copied into the flush buffer. If the data in the flush buffer satisfies a flush condition, the data in the flush buffer is written to the memory device starting at a multi-plane page offset of zero.

Two-stage buffer operations supporting write commands

A semiconductor device package includes a first substrate having an electrical circuit, semiconductor dies stacked one on top of the other, and bond wires electrically connected one to another. The bond wires electrically couple the semiconductor dies to one another and to the electrical circuit. There is a first bond wire having a first portion connected to a first semiconductor die, a second portion connected to a second semiconductor die, and an intermediate portion between the first portion and second portion. The semiconductor device package further includes a molding compound encapsulating the semiconductor dies, and the first and second portions of the first bond wire. The intermediate portion of the first bond wire is exposed along a top planar surface of the molding compound. The semiconductor device package may be used for coupling one or more other semiconductor device packages thereto via the exposed intermediate portion.

Semiconductor device package with exposed bond wires

Methods, systems, and devices for dynamic power control are described. In some examples, a memory device may be configured to adjust a first duration for transitioning power modes. For example, the memory device may be configured to operate in a first power mode, a second power mode, and a third power mode. When operating in a second power mode, the memory device may be configured to increase or decrease the first duration for transitioning to a third power mode based on a second duration between received commands. If no commands are received during the first duration, the memory device may transition from the second power mode to the third power mode.

Dynamic power control

Methods, systems, and devices for read operations for regions of a memory device are described. In some examples, a memory device may include a first cache for storing mappings between logical addresses and physical addresses of the memory device, and a second cache for storing indices associated with entries removed from the first cache. The memory device may include a controller configured to load mappings to the first cache upon receiving read commands. When the first cache is full, and when the memory device receives a read command, the controller may remove an entry from the first cache and may store an index associated with the removed entry to the second cache. The controller may then transmit a mapping associated with the index to a host device for use in a HPB operation.

Enhancement for activation and deactivation of memory address regions

Methods, systems, devices, and computer-readable media for performing read disturb management of a memory device. A method includes retrieving a value of a read counter for a block associated with a read request issued to a memory array; refreshing valid word lines in the block if the value of the read counter exceeds a first threshold; identifying a set of valid word lines in the block if the value of the read counter exceeds a second threshold, the second threshold lower than the first threshold; identifying a subset of the set of valid word lines, the subset of the set of valid word lines including word lines having an error rate above a pre-configured error rate threshold; and refreshing the subset of the set of valid word lines.

Balanced three-level read disturb management in a memory device

Methods, systems, and devices for memory operations are described. A first set of commands may be received for accessing a memory device. The first set of commands may include non-consecutive logical addresses that correspond to consecutively indexed physical addresses. A determination that the non-consecutive logical addresses correspond to consecutively indexed physical addresses may be determined based on a first mapping stored in a volatile memory. A second mapping may be transferred to the volatile memory based on the determination. The second mapping may include an indication of whether information stored at a set of physical address is valid. A second set of commands including non-consecutive logical addresses may be received for accessing the memory device. Data for the second set of commands that include the non-consecutive logical addresses may be retrieved from the memory device using the second mapping.

Techniques for non-consecutive logical addresses

A memory device provides a memory array including memory cells, a temperature sensing circuit, and a memory control unit operatively coupled to the memory array. The memory control unit includes a processor. The processor is configured to receive temperature information from the temperature sensing circuit, initiate programming of the memory cells with data using a first threshold voltage distribution when the temperature information indicates an operating temperature is in a first temperature range, and initiate programming of the memory cells with data using a second threshold voltage distribution when the temperature information indicates the operating temperature is in a second temperature range.

Memory with improved cross temperature reliability and read performance

A memory array including memory cells, a temperature sensing circuit, and a memory control unit operatively coupled to the memory array. The memory control unit includes a processor. The processor is configured to receive temperature information from the temperature sensing circuit, initiate programming of the memory cells with data using a first threshold voltage distribution when the temperature information indicates an operating temperature is in a first temperature range, and initiate programming of the memory cells with data using a second threshold voltage distribution when the temperature information indicates the operating temperature is in a second temperature range.

A method includes generating a test model based on at least one of test group dependencies and test group constraints and generating a resource base. The method includes generating a cost model and generating a resource allocation plan based on the test model, the resource base, and the cost model.

System and method for resource modeling and simulation in test planning

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Beijing, China

Hua Fang Tan