Applied Materials, Inc.

Mattson Technology, Inc

Beijing E-town Semiconductor Technology, Co., Ltd

Mattson Technolgoy, Inc.

Hua Chung

Michael Xiaoxuan Yang

Ling Chen

Mei Yin Chang

Vincent W Ku

Xinliang Lu

Schubert S Chu

Jeong Soo Byun

Ming Xi

Alfred W Mak

Dien-Yeh Wu

Ying Di Zhang

Xinyu Bao

Lawrence Chung-Lai Lei

Chun Yan

Ken Kaung Lai

Qi Zhang

Moris Kori

Christophe Marcadal

Alan Hiroshi Ouye

Jick M Yu

Seshadri Ganguli

Barry Lee Chin

Ashok K Sinha

Xuebin Li

Ting Xie

Rongjun Wang

Abhishek Dube

Nirmalya Maity

Haichun Yang

Yi-Chiau Huang

Hongbin Fang

Jenny Lin

Praburam Gopalraja

Norman M Nakashima

Zhiyuan Ye

Avgerinos V Gelatos

Flora Fong-Song Chang

Srinivas D Nemani

Hiroji Hanawa

Xianmin Tang

Feng Quan Liu

Errol Antonio C Sanchez

Hong Zhang

Shawming Ma

Anzhong Chang

Frederick C Wu

Wei Cao

Sang Won Kang

Jenn-Yue Wang

Kyawwin Jason Maung

Tsai Wen Sung

David P Bour

Srinivas Gandikota

Jeffrey W Anthis

Roderick Craig Mosely

Wei-Yung Hsu

Satheesh Kuppurao

Donald J K Olgado

David H Quach

Uday Mitra

Kevin Vincent Moraes

Amit Khandelwal

See-Eng Phan

Sang-Ho Yu

Alexander Tam

Sumedh Acharya

Ravi Rajagopalan

Sheng-Chin Kung

Madhu Moorthy

Ping Jian

Melitta Manyin Hon

Cheryl A Knepfler

Ludovic Godet

David P Thompson

Wei Liu

Arvind Sundarrajan

Tza-Jing Gung

Wei D Wang

Lawrence C Lei

Lori D Washington

Xiaoxiong Yuan

Regina Germanie Freed

Gongda Yao

Howard E Grunes

Sandeep Nijhawan

Anh Ngoc Nguyen

Olga Kryliouk

Murali K Narasimhan

Hong Sheng Yang

Nikolaos Bekiaris

Siqing Lu

Rong Tao

David Michael Thompson

Matthias Bauer

Jie Su

Dixit V Desai

Dong Hyung Lee

Jacob Grayson

Peter J Lembesis

Embodiments of the present disclosure generally relate to methods for forming epitaxial layers on a semiconductor device. In one or more embodiments, methods include removing oxides from a substrate surface during a cleaning process, flowing a processing reagent containing a silicon source and exposing the substrate to the processing reagent during an epitaxy process, and stopping the flow of the processing reagent. The method also includes flowing a purging gas and pumping residues from the processing system, stopping the flow of the purge gas, flowing an etching gas and exposing the substrate to the etching gas. The etching gas contains hydrogen chloride and at least one germanium and/or chlorine compound. The method further includes stopping the flow of the at least one compound while continuing the flow of the hydrogen chloride and exposing the substrate to the hydrogen chloride and stopping the flow of the hydrogen chloride.

Method and apparatus for low temperature selective epitaxy in a deep trench

Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

Selective cobalt deposition on copper surfaces

Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

Low temperature deposition of iridium containing films

Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.

Methods for the treatment of workpieces

Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.

Selective etch process using hydrofluoric acid and ozone gases

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

Method of utilizing a degassing chamber to reduce arsenic outgassing following deposition of arsenic-containing material on a substrate

Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include conducting a pre-treatment process on a processing chamber to generate a hydrogen radical affecting layer on a surface of the processing chamber prior to performing a hydrogen radical based surface treatment process on a workpiece in the processing chamber. In this manner, a pretreatment process can be conducted to condition a processing chamber to increase uniformity of hydrogen radical exposure to a workpiece.

Chamber seasoning to improve etch uniformity by reducing chemistry

Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include placing the workpiece on a workpiece support in a processing chamber. The method can include admitting a process gas into the processing chamber. The process gas can include an ozone gas. The method can include exposing the silicon nitride layer and the low-k dielectric layer to the process gas to modify a surface wetting angle of the silicon nitride layer.

Ozone for selective hydrophilic surface treatment

Processes for oxidation of a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a pre-oxidation treatment process on the workpiece in the processing chamber to initiate oxide layer formation on the workpiece. The method includes performing a remote plasma oxidation process on the workpiece in the processing chamber to continue the oxide layer formation on the workpiece. Subsequent to performing the pre-oxidation treatment process and the remote plasma oxidation process, the method can include removing the workpiece from the processing chamber. In some embodiments, the remote plasma oxidation process can include generating a first plasma from a remote plasma oxidation process gas in a plasma chamber; filtering species generated in the plasma to generate a mixture having one or more radicals; and exposing the one or more radicals to the workpiece.

Surface pretreatment process to improve quality of oxide films produced by remote plasma

Apparatus, systems, and methods for conducting an etch removal process on a workpiece are provided. The method can include generating a plasma from a deposition process gas in a plasma chamber using a plasma source to deposit a passivation layer on certain layers of a high aspect ratio structure. The method can include generating a plasma from an etch process gas in a plasma chamber using a plasma source to remove certain layers from the high aspect ratio structure. The method can include removing silicon nitride layers at a faster etch rate than silicon dioxide layers on the high aspect ratio structure.

Processing of workpieces using deposition process and etch process

Methods for material removal of a film, such as a metal nitride film, from a workpiece are provided. One example implementation is directed to a method for processing a workpiece. The workpiece can include a film (e.g., a metal nitride film). The method can include generating one or more species (e.g., hydrogen radicals, excited inert gas molecules, etc.). The method can include mixing alkyl halide with the one or more species to generate one or more alkyl radicals. The method can include exposing the film to the one or more alkyl radicals.

Processing of workpieces with reactive species generated using alkyl halide

Apparatus, systems, and methods for conducting a silicon containing material removal process on a workpiece are provided. In one example implementation, the method can include generating species from a process gas in a first chamber using an inductive coupling element. The method can include introducing a fluorine containing gas with the species to create a mixture. The mixture can include exposing a silicon structure of the workpiece to the mixture to remove at least a portion of the silicon structure.

Silicon mandrel etch after native oxide punch-through

Methods for processing a workpiece are provided. The workpiece can include a ruthenium layer and a copper layer. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The method can include performing an ozone etch process on the workpiece to at least a portion of the ruthenium layer. The method can also include performing a hydrogen radical treatment process on a workpiece to remove at least a portion of an oxide layer on the copper layer.

Processing of workpieces using ozone gas and hydrogen radicals

Growing community of inventors

San Jose, CA, United States of America

Hua Chung