Applied Materials, Inc.

Hua Ai

Sang Ho Yu

Bo Zheng

Salvador P Umotoy

Michael Sterling Jackson

Xiaoxiong Yuan

Hyman W H Lam

Hougong Wang

Hou Gong Wang

Wei W Wang

Mehul B Naik

Feng Quan Liu

Paul F Ma

Avgerinos V Gelatos

James S Papanu

He Ren

Yu Lei

Roderick Craig Mosely

Chien-Teh Kao

Xinyu Fu

Kai Wu

Mark Naoshi Kawaguchi

Zhiyuan Wu

Vikash Banthia

Bingxi Sun Wood

Jiang Lu

Weifeng Ye

Feiyue Ma

Xiaoxiong (John) Yuan

Hyman Lam

Chiukun Steven Lai

David Thompson

Interconnects and methods for forming interconnects are described and disclosed herein. The interconnect contains a stack formed on a substrate having a via and a trench formed therein, a first metal formed from a first material of a first type deposited in the via, and a second metal formed from a second material of a second type deposited in the trench.

Process integration approach of selective tungsten via fill

Methods for selectively depositing a cobalt layer are provided herein. In some embodiments, methods for selectively depositing a cobalt layer include: exposing a substrate to a first process gas to passivate an exposed dielectric surface, wherein the substrate comprises a dielectric layer having an exposed dielectric surface and a metal layer having an exposed metal surface; and selectively depositing a cobalt layer atop the exposed metal surface using a thermal deposition process.

Methods for thermally forming a selective cobalt layer

Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

Apparatuses and methods for atomic layer deposition

A substrate cleaning apparatus has a remote source to remotely energize a hydrogen-containing gas to form an energized gas having a first ratio of ionic hydrogen-containing species to radical hydrogen-containing species. The apparatus has a process chamber with a substrate support, an ion filter to filter the remotely energized gas to form a filtered energized gas having a second ratio of ionic hydrogen-containing species to radical hydrogen-containing species, the second ratio being different than the first ratio, and a gas distributor to introduce the filtered energized gas into the chamber.

Cleaning of native oxide with hydrogen-containing radicals

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Mountain View, CA, United States of America

Hua Ai