Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Peking University

Boe Technology Groupco., Ltd.

Hu Meng

Yanzhao Li

Chiachiang Lin

Qi Huang

Xuelei Liang

Long Wang

Qi Qi

Wei Guo

Liye Duan

Jingbo Xu

Hui Tian

Kui Liang

Xiaohui Liu

Defeng Mao

Chiehhsing Chung

Changcheng Ju

Xiaoyuan Zhang

Jiye Xia

Dali Liu

Boyuan Tian

Guodong Dong

A manufacturing method of a metal grid includes: providing a base substrate; forming a pattern including a first dielectric layer on the base substrate through a patterning process such that the first dielectric layer has a first groove in a lattice shape; forming a second dielectric layer on a side of the first dielectric layer away from the base substrate such that the second dielectric layer is deposited at least on a sidewall of the first groove to form a second groove in a lattice shape; and forming a metal material in the second groove, and removing at least a part of a material of the second dielectric layer such that an orthographic projection of the part of the material of the second dielectric layer on the base substrate does not overlap with an orthographic projection of the metal material on the base substrate, to form a metal grid.

Manufacturing method of metal grid, thin film sensor and manufacturing method of thin film sensor

An inorganic light-emitting diode substrate includes: a base, a plurality of epitaxial layer structures disposed on the base, a passivation layer, and a plurality of second electrodes disposed on a side of the passivation layer away from the base. The base includes a base substrate and a plurality of first electrodes disposed on the base substrate. The plurality of epitaxial layer structures are spaced apart, and each first electrode is coupled to one epitaxial layer structure. The passivation layer is made of photoresist. The passivation layer covers surfaces, away from the base, of the plurality of epitaxial layer structures, and fills gaps between the plurality of epitaxial layer structures. The passivation layer has a plurality of via holes, and each second electrode is coupled to one epitaxial layer structure through at least one via hole.

Inorganic light-emitting diode substrate and manufacturing method thereof, and inorganic light-emitting diode display device

A method of patterning a light-emitting layer and a method of manufacturing a light-emitting diode device are provided, including: providing a substrate; forming a first electrode layer on the substrate; forming a sacrificial layer on the first electrode layer; patterning the sacrificial layer to remove the sacrificial layer in a first region of the substrate and retain the sacrificial layer in a second region of the substrate, the first electrode layer is at least partially located in the first region; forming a first carrier auxiliary layer in the first region and the second region; forming a light-emitting layer on the first carrier auxiliary layer, and removing the retained sacrificial layer in the second region and the first carrier auxiliary layer and the light-emitting layer covering the retained sacrificial layer, and retaining the first carrier auxiliary layer and the light-emitting layer in the first region, to pattern the light-emitting layer.

Method of patterning light emitting layer, and method of manufacturing light-emitting diode device

A light-emitting diode includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, and a barrier layer disposed on at least part of a side face of at least one of the first semiconductor layer and the second semiconductor layer. The barrier layer is configured to form a charge depletion region between the barrier layer and the at least part of the side face.

Light-emitting diode and method of manufacturing the same, and display device

A thin film transistor and manufacturing method thereof, an electronic device are provided, which includes: a gate electrode, a gate insulation layer, an active layer, a first electrode and a second electrode are on a base substrate, the active layer made of a one-dimensional semiconductor nano material includes a first electrode region, a second electrode region, a first channel region, a second channel region; the first electrode region and the second electrode region are in contact with the first electrode and the second electrode respectively, the first channel region is directly connected with the first channel region and the second channel region respectively, the second channel region is a first doped region and between the first electrode region and the second electrode region; an energy level of the second channel region is different from that of the first channel region corresponding to the energy level of the second channel region.

Thin film transistor and manufacturing method thereof, and electronic device

The present disclosure provides a piezoelectric sensor, a pressure detecting device, their manufacturing methods and a detection method. The piezoelectric sensor comprises a thin film transistor located on a substrate and comprising an active layer, and a piezoelectric layer that is in contact with the active layer of the thin film transistor.

Piezoelectric sensor, pressure detecting device, manufacturing methods and detection method

The present disclosure provides a flat panel detection substrate, a fabricating method thereof and a flat panel detector. The flat panel detection substrate according to the present disclosure includes a base substrate; a bias electrode and a sense electrode on the base substrate; and a semiconductor layer over the bias electrode and the sense electrode, the semiconductor layer having a thickness greater than 100 nm.

Flat panel detection substrate, fabricating method thereof and flat panel detector

Disclosed are a pixel structure, a method for driving a pixel structure, a method for preparing a pixel structure, and a display apparatus. The pixel structure includes a plurality of sub-pixel groups arranged in an array; each of the sub-pixel groups comprises a first sub-pixel electrode, a second sub-pixel electrode a first-type carbon nanotube switch tube and a second-type carbon nanotube switch tube; the first sub-pixel electrode is connected to the first-type carbon nanotube switch tube; the second sub-pixel electrode is connected to the second-type carbon nanotube switch tube; and the first-type carbon nanotube switch tube and the second-type carbon nanotube switch tube in each of the sub-pixel groups are connected to the same gate line and the same data line.

Pixel structure, driving method therefor and preparation method therefor, and display apparatus

Disclosed is a nanofilm, a thin film transistor and manufacture methods thereof. The nanofilm of the present disclosure comprises a plurality of regions distributed in a film plane dimension, wherein each of the regions is composed of one kind of nanomaterial, and nanomaterials of adjacent regions are different from each other and contact with each other to form a heterojunction or a Schottky junction.

Nanofilm, thin film transistor, and manufacture methods thereof

A three-dimensional display device having an imaging space, wherein an up-conversion material is disposed inside the imaging space, a first light source that emits light toward the imaging space in a first direction, and a second light source that emits light toward the imaging space in a second direction. When the three-dimensional display device is operating, the light from the first light source and the light from the second light source intersect in the imaging space to form a convergence line or light convergence plane, such that the up-conversion material on the convergence line or in the convergence plane is excited to emit light.

Three-dimensional display device

The present application provides a method of fabricating a thin film transistor. The method includes selecting a nano-structure material having a monotonic relationship between a threshold voltage and a channel length when the nano-structure material is formed as a channel part in a thin film transistor; forming an active layer using the nano-structure material; determining a nominal channel length of a channel part of the thin film transistor based on the monotonic relationship and a reference threshold voltage so that the thin film transistor is formed to have a nominal threshold voltage; and forming a source electrode and a drain electrode thereby forming the channel part in the active layer having the nominal channel length.

Method of fabricating thin film transistor, thin film transistor, array substrate, and display apparatus

A thin film transistor, a method for manufacturing the same, an array substrate, and a display device are provided. The thin film transistor includes a substrate; a gate electrode, a gate insulating layer, an active layer, a source electrode, and a drain electrode provided on the substrate; wherein the active layer includes a source region, a drain region, and a channel region between the source region and the drain region, the channel region having a bending pattern.

Thin film transistor and manufacturing method thereof, array substrate and display device

Embodiments of the present disclosure provide preparation methods for a semiconductor layer and a TFT, a TFT and an array substrate. The preparation method for a semiconductor layer includes forming a silicon dioxide film on a substrate; forming sidewalls at two ends of the semiconductor layer to be formed by patterning process; performing amination treatment on the sidewalls so that an aminosiloxane monolayer self-assembly is formed on the surface of the sidewalls; carboxylating a carbon nanotube solution and making the carboxylated carbon nanotube solution on the surface of the substrate with the sidewalls formed to form a carbon nanotube film; removing portions of the carbon nanotube film other than the portion between the sidewalls to form a semiconductor layer.

Preparation methods for semiconductor layer and TFT, TFT and array substrate comprising semiconductor layer

The present application discloses a thin film transistor including a base substrate and an active layer on the base substrate having a first portion corresponding to a channel region, a second portion corresponding to a source electrode contact region, and a third portion corresponding to a drain electrode contact region. The second portion and the third portion include a three-dimensional nanocomposite material having a semiconductor material matrix and a plurality of nanopillars in the semiconductor material matrix.

Thin film transistor, array substrate and display panel having the same, and fabricating method thereof

An electroluminescent device and a manufacturing method thereof, and a display apparatus are provided. The electroluminescent device includes a base substrate; and an electron transport layer, disposed on the base substrate, the electron transport layer includes a first film layer for transporting electrons and a regulating structure arranged in contact with the first film layer, and the regulating structure is configured to regulate an electron mobility of the electron transport layer.

Growing community of inventors

Beijing, China

Hu Meng