Imec Vzw

Hu Liang

Geert Eneman

Steve Stoffels

Yoganand Saripalli

Xiuju Zhou

A method for manufacturing an III-nitride semiconductor structure is provided. The method includes providing a substrate comprising a first layer having an upper surface of monocrystalline III-nitride material; providing, over the upper surface, a patterned dielectric layer comprising a first dielectric feature; loading the substrate into a process chamber; exposing the substrate to a first gas mixture comprising at least one Group III-metal organic precursor gas, a nitrogen containing gas and hydrogen gas at a predetermined temperature, thereby forming, on the upper surface, a second layer of a monocrystalline III-nitride material by area selective growth wherein two opposing sidewalls of the dielectric feature are oriented parallel to one of the {11-20} crystal planes of the first layer such that upon formation of the second layer of the monocrystalline III-nitride material, a first trench having tapered sidewalls is formed so that the crystal plane of the second layer parallel to the tapered sidewalls is one of the {1-101} crystal planes.

Method for manufacturing a vertical power device including an III-nitride semiconductor structure

A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes: providing a monocrystalline substrate having an upper surface covered with a masking layer comprising at least one opening exposing the upper surface; filling the opening by epitaxially growing therein a first layer comprising a first Group III-nitride compound; and growing the first layer further above the opening and on the masking layer by epitaxial lateral overgrowth, wherein the at least one opening has a top surface defined by three or more straight edges forming a polygon parallel to the upper surface and oriented in such a way with respect to the crystal lattice of the monocrystalline substrate so as to permit the epitaxial lateral overgrowth of the first layer in a direction perpendicular to at least one of the edges, thereby forming the semiconductor structure as an elongated structure.

Method for forming a semiconductor structure and a semiconductor structure manufactured thereof

An example embodiment includes method for forming a layer of a Group III-Nitride material. The method includes providing a substrate having a main surface comprising a layer of a first Group III-nitride material. The substrate further includes, on the main surface, a dielectric layer comprising an opening exposing the first Group III-nitride material. A thermal treatment process is performed while subjecting the substrate to a gas mixture comprising a nitrogen containing gas, thereby increasing temperature of the substrate up to a temperature for growing a layer of a second Group III-nitride material. At least one Group III-metal organic precursor gas is subsequently introduced into the gas mixture at the growth temperature, thereby forming, at least in the opening on the exposed Group III-nitride material, a layer of the second Group III-nitride material by selective epitaxial growth, characterized in that the gas mixture is free of hydrogen gas.

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Leuven, Belgium

Hu Liang