Zju-Hangzhou Global Scientific and Technological Innovation Center

Hu Chen

Na Ren

Kuang Sheng

Zhengyun Zhu

A trench-gate power MOSFET with optimized layout, comprising: a substrate; a first semiconductor region formed on the substrate, having a first doping type; mutually separated trench isolation gate structure, formed on the first semiconductor region, the trench isolation gate structure includes an gate oxide layer and a gate electrode; a second semiconductor region and a third semiconductor region formed between any two adjacent structures of mutually separated trench isolation gate structures; and a first shielding region, formed under each of the third semiconductor regions, connecting simultaneously with multiple mutually separated trench isolation structures.

Growing community of inventors

Zhejiang, China

Hu Chen