Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsueh-Wen Tsau

Chia-Ching Lee

Chung-Liang Cheng

Ziwei Fang

Da-Yuan Lee

Huang-Lin Chao

I-Ming Chang

Chung-Chiang Wu

Chun-I Wu

Chun-Yuan Chou

Ming-Hsing Tsai

Mrunal Abhijith Khaderbad

Chih-Cheng Lin

Cheng-Yen Tsai

Ching-Hwanq Su

Hsiang-Pi Chang

A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack includes a gate dielectric layer, a first metal-containing layer, a silicon-containing layer, a second metal-containing layer, and a gate electrode layer sequentially stacked over the substrate, the silicon-containing layer is between the first metal-containing layer and the second metal-containing layer, and the silicon-containing layer includes an oxide material.

Semiconductor device structure

A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack includes a gate dielectric layer, a first metal-containing layer, a silicon-containing layer, a second metal-containing layer, and a gate electrode layer sequentially stacked over the substrate. The silicon-containing layer is between the first metal-containing layer and the second metal-containing layer, and the silicon-containing layer is thinner than the second metal-containing layer.

A method for forming a semiconductor device structure is provided. The method includes providing a substrate and an insulating layer over the substrate. The insulating layer has a trench partially exposing the substrate. The method includes forming a gate dielectric layer in the trench. The method includes forming a first metal-containing layer over the gate dielectric layer. The method includes forming a silicon-containing layer over the first metal-containing layer. The method includes forming a second metal-containing layer over the silicon-containing layer. The method includes forming a gate electrode layer in the trench and over the second metal-containing layer.

Semiconductor device structure and method for forming the same

A method for forming a semiconductor device structure is provided. The method includes forming a semiconductor layer on a semiconductor substrate, forming an interfacial layer on the semiconductor layer, forming a first gate dielectric layer on the interfacial layer, introducing fluorine on the first gate dielectric layer, annealing the first gate dielectric layer, forming a second gate dielectric layer on the first gate dielectric layer, introducing fluorine on the second gate dielectric layer, annealing the second gate dielectric layer, and forming a gate stack structure on the second gate dielectric layer.

Method for forming semiconductor device structure

A fin field effect transistor (FinFET) is provided. The FinFET includes a first gate having top and bottom portions of different widths, the top portion of the first gate being disposed above the bottom portion of the first gate. The FinFET also includes a second gate having top and bottom portions of different widths, the top portion of the second gate being disposed above the bottom portion of the second gate. A first inter-layer dielectric layer is disposed between the first gate and the second gate in an interposed manner. The first inter-layer dielectric layer has a thickness equal to a height of the bottom portions of the first and second gates. A second inter-layer dielectric layer is patterned over the first inter-layer dielectric layer.

Fin field effect transistor (FinFET)

A semiconductor structure includes a substrate, a dielectric layer, a metal layer, and a tungsten layer. The dielectric layer is on the substrate and has a recess feature therein. The metal layer is in the recess feature. The metal layer has an oxygen content less than about 0.1 atomic percent. The tungsten layer is in the recess feature and in contact with the metal layer.

Semiconductor structure

Structures and formation methods of a semiconductor device structure are provided. A method for forming a semiconductor device structure includes patterning a semiconductor substrate to form a fin structure. The method also includes forming a sacrificial material over the fin structure. The method further includes forming spacer elements adjoining sidewalls of the sacrificial material. Furthermore, the method includes removing the sacrificial material so that a trench is formed between the spacer elements. The method also includes forming a gate dielectric layer in the trench. The method further includes forming a work function layer in the trench to cover the gate dielectric layer. In addition, the method includes depositing a tungsten bulk layer with a precursor to fill the trench. The precursor includes a tungsten-containing material that is substantially free of fluoride.

Structure and formation method of semiconductor device structure

A semiconductor structure and the method of forming the same are provided. The method of forming a semiconductor structure includes forming a recess feature in a basal layer, forming a metal layer on the basal layer, exposing the metal layer to a tungsten halide gas to form an oxygen-deficient metal layer, and forming a bulk tungsten layer on the oxygen-deficient metal layer.

Semiconductor structure and methods of forming the same

A method is provided for forming a trench on a FinFET. In an exemplary embodiment, a first inter-layer dielectric layer is formed between a first gate and a second gate of the FinFET in an interposed manner. A second inter-layer dielectric layer is formed above the first inter-layer dielectric layer, the first gate of the FinFET, and the second gate of the FinFET. A photoresist layer is formed above the second inter-layer dielectric layer. And part of the second inter-layer dielectric layer that is not below the photoresist layer is etched.

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Miaoli County, Taiwan

Hsueh-Wen Tsau