Macronix International Co., Ltd.

Hsueh-I Huang

Shyi-Yuan Wu

Cheng-Chi Lin

Shih-Chin Lien

Chien-Wen Chu

Shuo-Lun Tu

Ming-Tung Lee

Chin-Pen Yeh

A method of fabricating an integrated semiconductor device, comprising: providing a substrate having a first region and a second region; and forming a semiconductor unit on the first region and forming a micro electro mechanical system (MEMS) unit on the second region in one process.

Method of fabricating integrated semiconductor device and structure thereof

Method of fabricating integrated semiconductor device with MOS, NPN BJT, LDMOS, pre-amplifier and MEMS unit

A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first and the second wells, respectively; a field oxide layer (FOX) disposed on the first well between the source and the drain regions; a gate conductive layer disposed over the second well between the source and the drain regions extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well below a portion of the gate conductive layer and the FOX connecting to the drain region. A channel region is defined in the second well between the doped region and the source region.

Low on-resistance lateral double-diffused MOS device

Method of fabricating low on-resistance lateral double-diffused MOS device

Growing community of inventors

Hsinchu, Taiwan

Hsueh-I Huang