National Chung Shan Institute of Science and Technology

Hsueh-I Chen

Cheng-Jung Ko

Chih-Wei Kuo

Dai-Liang Ma

Bo-Cheng Lin

Bang-Ying Yu

Chuen-Ming Gee

Jun-Bin Huang

Ying-Cong Zhao

Chia-Hung Tai

Shu-Yu Yeh

Chih-Hsing Wang

Ying-Tsung Chao

A method for preparing a carbide protective layer comprises: (A) mixing a carbide powder, an organic binder, an organic solvent and a sintering aid to form a slurry; (B) spraying the slurry on a surface of a graphite component to form a composite component; (C) subjecting the composite component to a cold isostatic pressing densification process; (D) subjecting the composite component to a constant temperature heat treatment; (E) repeating steps (B)-(D) until a coating is formed on a surface of the composite component; (F) subjecting the coating to a segmented sintering process; (G) obtaining a carbide protective layer used for the surface of the composite component. Accordingly, while the carbide protective layer can be completed by using the wet cold isostatic pressing densification process and the cyclic multiple superimposition method, so that it can improve the corrosion resistance in the silicon carbide crystal growth process environment.

Method for preparing carbide protective layer

A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.

Preparation apparatus for silicon carbide crystals comprising a circular cylinder, a doping tablet, and a plate

A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.

Device for growing monocrystalline crystal

Growing community of inventors

Taoyuan, Taiwan

Hsueh-I Chen