Hannstar Display Corporation

Industrial Technology Research Institute

Nan Ya Technology Corporation

Hsueh-Feng Shih

Shu-Liang Nin

A connector socket includes a housing with a slot for receiving a connecting portion of memory module; a side plate disposed inside the slot and mounted on an inner sidewall of the slot; at least two rows of sleeves alternately arranged and mounted on the side plate; a plurality of first conductive arms having first conductive distal terminals, passing through corresponding upper row of the at least two rows of sleeves; a plurality of second conductive arms having second conductive distal terminals, passing through corresponding lower row of the at least two rows of sleeves; and a pushing member on the housing for pushing the resilient side plate such that the first conductive distal terminals can contact with an upper row of fingers on the connecting portion, while the second conductive distal terminals can contact with a lower row of fingers on the connecting portion.

Connector socket for memory module

The present invention discloses a structure of a TFT-LCD and its forming process in order to reduce the number of masking steps for manufacturing the tri-layer structure of a TFT-LCD, and further provides a process for forming a TFT-LCD with four masking steps. In addition, the forming processes of a storage capacitor, a wiring pad and an electrostatic discharge structure are performed simultaneously with the forming process of a TFT-LCD.

TFT-LCD formed with four masking steps

An ITO layer and a first metal layer is patterned on a glass substrate. A first silicon nitride layer, a silicon layer and a second silicon nitride layer are formed on the substrate. A back-side exposure is introduced using the gate electrodes as a mask. The second silicon nitride layer that is not covered by a positive photoresist is etched. A heavily doped silicon layer is formed over the substrate. A negative photoresist is formed over the heavily doped silicon layer. Then, a further back-side exposure is employed. The heavily doped silicon layer over the etched second silicon nitride layer is removed. Via holes are created to expose a portion of the first metal layer. A second metal layer and a third metal layer are respectively formed. Next, a thermal annealing is performed for forming silicide. Subsequently, a third metal layer and the second metal layer are patterned. Then, the island pattern is defined. Subsequently, a passivation layer formed of silicon nitride layer is deposited on the island pattern.

Growing community of inventors

Taipei, Taiwan

Hsueh-Feng Shih