Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsuan-Wen Wang

Hao-Ming Chang

Chien-Hung Lai

Chih-Tsung Shih

Cheng-Ming Lin

Yuan-Chih Chu

Shao-Chi Wei

Chia-Shih Lin

Yu-Hsin Hsu

Min-An Yang

Yu-Hsun Wu

S C Hsu

A method for forming a photomask includes receiving a mask substrate including a protecting layer and a shielding layer formed thereon, removing portions of the shielding layer to form a patterned shielding layer, and providing a BSE detector to monitor the removing of the portions of the shielding layer. When a difference in BSE intensities obtained from the BSE detector is greater than approximately 30%, the removing of the portions of the shielding layer is stopped. The BSE intensity in following etching loops becomes stable.

Photomask and method for forming the same

A photomask includes a substrate, a multilayer stack disposed over the substrate and configured to reflect a radiation, a capping layer over the multilayer stack, and an anti-reflective layer over the capping layer. The anti-reflective layer comprises a first pattern, wherein the first pattern exposes the capping layer and is configured as a printable feature. The photomask also includes an absorber spaced apart from the printable feature from a top-view perspective.

Photomask with enhanced contamination control and method of forming the same

A method of manufacturing a mask includes depositing an end-point layer over a light transmitting substrate, depositing a phase shifter over the end-point layer, depositing a hard mask layer over the phase shifter, and removing a portion of the hard mask layer and a first portion of the phase shifter to expose a portion of the end-point layer. The end-point layer and the light transmitting substrate are transparent to a predetermined wavelength.

Photomask and fabrication method therefor

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Kaohsiung, Taiwan

Hsuan-Wen Wang