Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsuan-I Wang

Hsin-Chang Lee

Anthony Yen

Pei-Cheng Hsu

Yun-Yue Lin

Hsuan-Chen Chen

A structure including an EUV mask and a pellicle attached to the EUV mask. The pellicle includes a pellicle frame and a plurality of pellicle membrane layers attached to the pellicle frame. The plurality of pellicle membrane layers include at least one core pellicle membrane layer and an additional pellicle membrane layer is disposed on the at least one core pellicle membrane layer. In some embodiments, the additional pellicle membrane layer is a material having a thermal emissivity greater than 0.2, a transmittance greater than 80%, and a refractive index (n) for 13.5 nanometer source of greater than 0.9.

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Taipei, Taiwan

Hsuan-I Wang