Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsuan-Hui Hung

Cheng-Chi Chuang

Kun-Ming Huang

Ming-Yi Lin

A passivation structure includes a bottom dielectric layer. The passivation structure further includes a doped dielectric layer over the bottom dielectric layer. The doped dielectric layer includes a first doped layer and a second doped layer. The passivation structure further includes a top dielectric layer over the doped dielectric layer.

Passivation structure and method of making the same

An integrated circuit includes a substrate and passivation layers. The passivation layers include a bottom dielectric layer formed over the substrate for passivation, a doped dielectric layer formed over the bottom dielectric layer for passivation, and a top dielectric layer formed over the doped dielectric layer for passivation.

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Changhua, Taiwan

Hsuan-Hui Hung