Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsiu-Wen Wu

Tzu-Jin Yeh

Ho-Hsiang Chen

Ying-Ta Lu

Hsien-Yuan Liao

Chi-Hsien Lin

Chiao-Han Lee

The present disclosure provides a semiconductor device and a method of manufacturing a semiconductor device. The semiconductor device comprises a substrate, a first gate electrode, a second gate electrode, a first doped region, a second doped region, a third doped region, and a first interconnection structure. The substrate comprises a well region of a first conductive type. The first and second gate electrodes are disposed on the substrate. The first, second, and third doped regions are embedded within the well region and are of the first conductive type. The first interconnection structure electrically connects the first gate electrode and the second gate electrode. The first doped region and the second doped region are disposed on opposite sides of the first gate electrode.

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Taoyuan, Taiwan

Hsiu-Wen Wu