International Business Machines Corporation

Globalfoundries Inc.

Egypt Nanotechnology Center

Egypt Nanotechnology Center (egnc)

Hsinyu Tsai

Michael A Guillorn

Chi-Chun Liu

Kafai Lai

Joy Cheng

Hiroyuki Miyazoe

Markus Brink

Josephine B Chang

Ali Afzali-Ardakani

Shu-Jen Han

Chung-Hsun Lin

Jed Walter Pitera

Ananthan Raghunathan

Gregory S Doerk

Sufi Zafar

Robert L Bruce

Sebastian Ulrich Engelmann

Glenn John Martyna

Payel Das

Ahmed Maarouf

Melia Tjio

Amal Kasry

Razvan Nistor

Steven J Holmes

Ratnam Sooriyakumaran

Wu-Song S Huang

Daniel Sanders

Dario Leonardo Goldfarb

Sarunya Bangsaruntip

Linda Karin Sundberg

Hoa D Truong

Martin Glodde

Luisa Dominica Bozano

Gurpreet Singh

Adam M Pyzyna

Alexander M Friz

Ashish V Jagtiani

Melih Ozlem

Matthew Earl Colburn

Deborah A Neumayer

Gregory Michael Wallraff

Mahmoud M Khojasteh

Daniel James Dechene

John M Papalia

Gregory M Walraff

A method for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, the method comprising expanding a shape of the guiding pattern by a predetermined distance in both lateral directions to form a fin keep mask, where the fin keep mask comprises a stand-alone mask.

Reducing chemoepitaxy directed self-assembled defects

The present invention relates generally to the field of microelectronics, and more particularly to a structure and method of forming a biosensor having a nucleotide attracting surface tailored to reduce false detection of nucleotides and enabling optical detection of nucleotides. The biosensor may include an analyte-affinity layer on an upper surface of a dielectric layer. The analyte-affinity layer may include a plurality of cylindrical gold portions with dimensions tailored for a target analyte. A distance between adjacent portions of the plurality of portions may range from approximately 50% of a length of a target analyte to approximately 300% of a length of a target analyte. The plurality of portions of the analyte-affinity layer have an upper surface with a diameter ranging from approximately 3 nm to approximately 20 nm.

Biosensor for optical detection of nucleotide sequence

The present invention relates generally to the field of microelectronics, and more particularly to a structure and method of forming a biosensor having a nucleotide attracting surface formed to reduce false detection of nucleotides and enabling electrical detection of nucleotides. The biosensor may include an analyte-affinity layer on an upper surface of a substrate. A conductive layer may extend a length of the substrate below and in contact with the analyte-affinity layer. The conductive layer may be electrically connected to one or more transistors. The analyte-affinity layer may have dimensions tailored for a target analyte. A distance between a first analyte-affinity layer and a second analyte-affinity layer may range from approximately 50% of a length of a target analyte to approximately 300% of a length of a target analyte. The analyte-affinity layer may have an upper surface with a diameter ranging from approximately 3 nm to approximately 20 nm.

Biosensor for electrical detection of a nucleotide sequence

A method for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, the method comprising: inserting a first external dummy along an external edge of the guiding pattern in a vertical direction; and inserting a second external dummy at a fixed distance from a second edge of the first external dummy, wherein the second external dummy includes a two-dimensional shape such that at least two edges of the second external dummy are parallel to the second edge of the first external dummy.

Method and recording medium of reducing chemoepitaxy directed self-assembled defects

A method of forming metal lines that are aligned to underlying metal features that includes forming a neutral layer atop a hardmask layer that is overlying a dielectric layer. The neutral layer is composed of a neutral charged di-block polymer. Patterning the neutral layer, the hardmask layer and the dielectric layer to provide openings that are filled with a metal material to provide metal features. A self-assembled di-block copolymer material is deposited on a patterned surface of the neutral layer and the metal features. The self-assembled di-block copolymer material includes a first block composition with a first affinity for alignment to the metal features. The first block composition of the self-assembled di-block copolymer is converted to a metal that is self-aligned to the metal features.

Chemoepitaxy etch trim using a self aligned hard mask for metal line to via

In one aspect, a method for placing carbon nanotubes on a dielectric includes: using DSA of a block copolymer to create a pattern in the placement guide layer on the dielectric which includes multiple trenches in the placement guide layer, wherein there is a first charge on sidewall and top surfaces of the trenches and a second charge on bottom surfaces of the trenches, and wherein the first charge is different from the second charge; and depositing a carbon nanotube solution onto the dielectric, wherein self-assembly of the deposited carbon nanotubes within the trenches occurs based on i) attractive forces between the first charge on the surfaces of the carbon nanotubes and the second charge on the bottom surfaces of the trenches and ii) repulsive forces between the first charge on the surfaces of the carbon nanotubes and the first charge on sidewall and top surfaces of the trenches.

Placement of carbon nanotube guided by DSA patterning

A method, computer program product, and system for identifying a surface area size of a biosensing structure, for use in a biosensor device, based on a plurality of nucleotides structures under test. A first set of properties are determined comprising: reaction coordinate values, and potential of mean force (PMF) values, for the plurality of nucleotide structures based on a first set of testing conditions comprising a first surface area material, a first surface area pattern, and a first surface area size. A second set of properties is determined comprising reaction coordinate values, and PMF values, for the plurality of nucleotide structures based on a second set of testing conditions comprising a second surface area material, a second surface area pattern, a second surface area size, or a combination thereof and a target population of nucleotide structures among the plurality of nucleotide structures are identified.

Reduction of surface nucleotide hybridization by optimizing a biosensor sensing surface area

A method, system, and non-transitory computer readable medium for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern include inserting an internal dummy between a first portion of the guiding pattern and a second portion of the guiding pattern if a vertical spacing is equal to or greater than a first predetermined distance, inserting a first external dummy along an external edge of the guiding pattern in a vertical direction if the vertical spacing is greater than a second predetermined distance, and inserting an anti-taper structure on the first external dummy if a second distance from the external edge of the guiding pattern to an edge of the first external dummy is greater than a first distance.

The disclosure provides methods for directed self-assembly (DSA) of a block co-polymer (BCP). In one embodiment, a method includes: forming an oxide spacer along each of a first sidewall and a second sidewall of a cavity in a semiconductor substrate; forming a neutral layer between the oxide spacers and along a bottom of the cavity; and removing the oxide spacers to expose the first and second sidewalls and a portion of the bottom of the cavity adjacent the first and second sidewalls.

Directed self-assembly

Hybrid pre-patterns were prepared for directed self-assembly of a given block copolymer capable of forming a lamellar domain pattern. The hybrid pre-patterns have top surfaces comprising independent elevated surfaces interspersed with adjacent recessed surfaces. The elevated surfaces are neutral wetting to the domains formed by self-assembly. Material below the elevated surfaces has greater etch-resistance than material below the recessed surfaces in a given etch process. Following other dimensional constraints of the hybrid pre-pattern described herein, a layer of the given block copolymer was formed on the hybrid pre-pattern. Self-assembly of the layer produced a lamellar domain pattern comprising self-aligned, unidirectional, perpendicularly oriented lamellae over the elevated surfaces, and parallel and/or perpendicularly oriented lamellae over recessed surfaces. The domain patterns displayed long range order along the major axis of the pre-pattern. The lamellar domain patterns are useful in forming transfer patterns comprising two-dimensional customized features.

Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers

Methods for preparing a patterned directed self-assembly layer generally include providing a substrate having a block copolymer layer including a first phase-separated polymer defining a first pattern in the block copolymer layer and a second phase-separated polymer defining a second pattern in the block copolymer layer. The block polymer layer is exposed to a gas pulsing carbon monoxide polymer. The gas pulsing is configured to provide multiple cycles of an etching plasma and a deposition plasma to selectively remove the second pattern of the second phase-separated polymer while leaving behind the first pattern of the first phase-separated polymer on the substrate.

Selective dry etch for directed self assembly of block copolymers

A chemical pattern layer including an orientation control material and a prepattern material is formed over a substrate. The chemical pattern layer includes alignment-conferring features and additional masking features. A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component is removed selective to a second polymeric block component by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch.

Pattern decomposition method for wiring patterns with chemoepitaxy based directed self assembly

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White Plains, NY, United States of America

Hsinyu Tsai