Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsing-Yi Chien

Yu-Chang Jong

Te-Yin Hsia

Ruey-Shin Liu

A semiconductor device includes a first high-voltage well having a first dopant disposed in a semiconductor substrate; a second high-voltage well having a second dopant disposed in the semiconductor substrate, laterally adjacent to the first high-voltage well; a low-voltage well having the second dopant disposed overlying the second high-voltage well; a drain region having the first dopant disposed in the first high-voltage well; a source having the first dopant disposed in the low-voltage well; and a gate disposed on the semiconductor substrate and laterally between the source and the drain, wherein the gate includes a thin gate dielectric and a gate electrode.

Growing community of inventors

Taichung, Taiwan

Hsing-Yi Chien