Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsing-kuo Hsia

Chewn-Pu Jou

Feng-Wei Kuo

Chih-Wei Tseng

A semiconductor structure is provided. The semiconductor structure includes a dielectric layer, a first waveguide structure, a reflective layer, a semiconductive layer, and a micro-lens. The first waveguide structure is disposed in the dielectric layer and extends along a first direction. The reflective layer is disposed in the dielectric layer and includes an inclined surface configured to redirect an optical signal from a second direction to the first direction. The semiconductive layer is disposed over the dielectric layer. The micro-lens is disposed at the semiconductive layer, wherein an optical signal travels into the semiconductive layer through the micro-lens along the second direction. A method of manufacturing the semiconductor structure is also provided.

Semiconductor structure and method of manufacturing the same

A package structure comprises photonic dies and an interposer structure. Each photonic die includes a dielectric layer and a first grating coupler embedded in the dielectric layer. The interposer structure is disposed below the photonic dies. The interposer structure includes an oxide layer and a second grating coupler embedded in the oxide layer. The photonic dies are optically coupled through the first grating couplers of the photonic dies and the second grating coupler of the interposer structure.

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HSINCHU COUNTY, Taiwan

Hsing-kuo Hsia