Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsing-Hui Hsu

Chih-Yung Lin

Po-Nien Chen

Yi-Hsuan Chung

Bo-Shiuan Shie

A structure and a formation method of a semiconductor device are provided. The method includes forming a first semiconductor fin and a second semiconductor fin over a semiconductor substrate. The second semiconductor fin is wider than the first semiconductor fin. The method also includes forming a gate stack over the semiconductor substrate, and the gate stack extends across the first semiconductor fin and the second semiconductor fin. The method further includes forming a first source/drain structure on the first semiconductor fin, and the first source/drain structure is p-type doped. In addition, the method includes forming a second source/drain structure on the second semiconductor fin, and the second source/drain structure is n-type doped.

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Hsinchu, Taiwan

Hsing-Hui Hsu