Industrial Technology Research Institute

Hsing-Hua Wu

Yu-Cheng Chen

Po-Tsun Liu

Chi-Lin Chen

Wei-Yuan Cheng

Jyh-Wen Shiu

Chian-Fu Huang

A display module is provided, which includes a first and a second substrates, a transparent type solar cell, a display device, an electric power storage device, a driving circuit and a power supply transfer switch. In the display module, the first substrate, the transparent type solar cell, the display device and the second substrate are successively arranged according to an incident direction of a light source. The transparent type solar cell has a visible light transmittance of 10%-40% and a color temperature (Tc) larger than 2400K. The electric power storage device is connected to the transparent type solar cell for storing electric power there from, and the driving circuit is connected to the display device for driving the same. The power supply transfer switch is used for transferring the electric power into the electric power storage device or the driving circuit.

Display module

A method of fabricating a thin film transistor (TFT) includes first providing a strip-shaped silicon island which is a thin film region with a predetermined long side and short side. Next, the strip-shaped silicon island is subject to an ion implantation to form a first ion doping region and a second ion doping region. The first and second ion doping regions, respectively used as the source and the drain of the TFT, are located at two sides along the long side of the island and substantially perpendicular to the gate. A gate is formed over the strip-shaped silicon island and the first and second ion doping regions, wherein the gate is substantially parallel to the direction of the short side.

Method of fabricating thin film transistor structure having strip-shaped silicon island

A structure of a thin film transistor and a method for making the same are provided. The structure includes a strip-shaped silicon island, a gate, and a first and second ion doping regions. The strip-shaped silicon island is a thin film region with a predetermined long side and short side, and farther has a plurality of lateral grain boundaries substantially parallel to the short side of the silicon island. The gate is located over the silicon island and substantially parallel to the lateral grain boundaries. The first and second ion doping regions, used as source/drain regions of the TFT, are located at two sides along the long side of the island and substantially perpendicular to the gate.

Growing community of inventors

Kaohsiung, Taiwan

Hsing-Hua Wu