Motorola Corporation

Jds Uniphase Corporation

Cbrite Inc.

E20 Communications, Inc.

Other

E2o Communications, Inc.

Mororola, Inc.

E20 Corporation, Inc.

Hsing-Chung Lee

Chan-Long Shieh

Song Q Shi

Wenbin Jiang

Franky So

Michael S Lebby

Piotr Grodzinski

Ji-Hai Xu

Gang Yu

Donald E Ackley

Thomas B Harvey, Iii

Chengping Wei

Julian Cheng

Liew-Chuang Chui

Paige M Holm

Rong-Ting Huang

Michael J Hartmann

Yong Cheng

Jamal Ramdani

Fatt Foong

Cheng Ping Wei

Diana C Chen

Edwin Dair

Xiong Gong

Cynthia G Briscoe

Cynthia A Gorsuch

Michael Krihak

Vi-en Choong

Cheng-Ping Wei

Jeff Tsao

David K Lewis

Marc H Wildy

Kaixia Yang

Min-Wen Chiang

Min-Wen Cheng

Boo Jorgen Larŝ Nilsson

M V Ramana Murty

Dan Dapkus

Xiqing Sun

A method of annealing a metal oxide on a temperature sensitive substrate formation includes the steps of providing a temperature sensitive substrate formation and forming a spacer layer on a surface of the substrate formation. A metal oxide semiconductor device is formed on the spacer layer, the device includes at least a layer of amorphous metal oxide semiconductor material, an interface of the amorphous metal oxide layer with a dielectric layer, and a gate metal layer adjacent the layer of amorphous metal oxide semiconductor material and the interface. The method then includes the step of at least partially annealing the layer of metal oxide semiconductor material by heating the adjacent gate metal layer with pulses of infra red radiation to improve the mobility and operating stability of the amorphous metal oxide semiconductor material while retaining at least the amorphous metal oxide semiconductor material adjacent the gate metal layer amorphous.

Laser annealing of metal oxide semiconductor on temperature sensitive substrate formations

Two-terminal switching devices of MIM type having at least one electrode formed by a liquid phase processing method are provided for use in active matrix backplane applications; more specifically, MIM devices with symmetric current-voltage characteristics are applied for LCD active matrix backplane applications, and MIM devices with asymmetric current-voltage characteristics are applied for active matrix backplane implementation for electrophoretic displays (EPD) and rotating element displays. In particular, the combination of the bottom metal, metal-oxide insulator and solution-processible top conducting layer enables high throughput, roll-to-roll process for flexible displays.

Metal-insulator-metal (MIM) devices and their methods of fabrication

Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotating element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.

Two-terminal switching devices and their methods of fabrication

Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotataing element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.

A high performance thin film transistor includes a flexible substrate, a layer of metal oxide semiconductor material deposited on the flexible substrate, and a layer of self-assembled organic gate dielectric material deposited on the metal oxide semiconductor material. The metal oxide semiconductor material has high carrier mobility and is transparent. An interface is formed between the layer of metal oxide semiconductor material and the layer of organic gate dielectric material that is substantially free of reactions and Fermi level pinning. The polymer materials are not polar and do not give rise to gap state formation and interface scattering.

High performance flexible substrate thin film transistor and method

A method of fabricating self-aligned metal oxide TFTs on transparent flexible substrates is disclosed and includes the steps of providing a transparent flexible substrate with at least an opaque first metal TFT electrode in a supporting relationship on the front surface of the substrate and a layer of transparent material, including at least one of a metal oxide semiconductor and/or a gate dielectric, on the front surface of the substrate and the first metal TFT electrode. A layer of photoresist is positioned in overlying relationship to the layer of transparent material. Dual photo masks are positioned over the front and rear surfaces of the substrate, respectively, and the layer of photoresist is exposed. The layer of photoresist is developed and used to form a layer of second metal.

Self-aligned transparent metal oxide TFT on flexible substrate

An optical transceiver includes a single integrated circuit chip to integrate the drive, receive, control, and monitoring functions of the optical transceiver. The single chip may further have an advance replacement algorithm and monitoring algorithm for the opto-electronic devices of the optical transmitter and receiver to generate flags and/or an advance replacement indication. Methods, apparatus, and systems are disclosed.

Integrated driving, receiving, controlling, and monitoring for optical transceivers

A multichannel fiber optic module has an electromagnetic shield surrounding high frequency electrical components which is electrically and mechanically coupled to one or more guide rails near edges of a printed circuit board. The one or more guide rails of the printed circuit board include a ground trace on the top and/or bottom surfaces of the printed circuit board. The fiber optic module can be hot inserted into a module cage which has guide rail slots for mating with the guide rails of the fiber optic module. Through the guide rail slots, electromagnetic radiation from the fiber optic module is shunted to a ground plane to which the module cage is coupled on a host chassis ground. Standard singular fiber receptacles are used for the parallel data link modules to allow field cable termination.

Method and apparatus for parallel optical interconnection of fiber optic transmitters, receivers and transceivers

A high-speed optical data link includes a system circuit board, a first ASIC coupled to convey electrical information to and from up level data management circuits, and a second ASIC electrically coupled to the first ASIC. A fiber optic module mounted on the system circuit board including a receiver, a transmitter and the second ASIC. The receiver includes a photo-diode positioned to receive optical signals, a trans-impedance amplifier electrically coupled to the photo diode, and a post-amplifier electrically coupled to the trans-impedance amplifier and to the second ASIC. The transmitter includes a laser positioned to convey optical signals to a remote optical receiver and a laser driver electrically coupled to the laser and to the second ASIC. Both the first and the second ASICs include clocking and equalization/retiming functions for recovering distorted data transmitted therebetween through electrical traces on the system circuit board so as to send electrical data at rates equal to or higher than 10-Gbps.

High-speed optical data links

Monolithic integrated vertical-cavity surface-emitting laser devices are disclosed including an edge-emitting semiconductor pump laser (PL), an optically-pumped vertical-cavity surface-emitting laser (VCSEL), and a means for deflecting and shaping the output beam of the pump laser to optically excite the VCSEL. The optically-pumped VCSEL structure may be adapted to include a resonant cavity with multiple fixed wavelengths, or a resonance cavity whose wavelength is continuously tunable. Wafer level manufacturing techniques are also disclosed.

Systems, methods, and apparatuses for optically pumped vertical cavity surface emitting laser devices

A vertical cavity surface emitting laser includes a first mirror region forming a first distributed Bragg reflector, a first cladding region, an active region, a second cladding region including a high electrical resistance implanted region positioned to define a current path, a second mirror region, and a current spreading region. A first electrical contact is positioned on the current spreading region and a second electrical contact is positioned to conduct electrical current in circuit with the first electrical contact through the current path. The current spreading region and the second mirror region cooperate to produce substantially uniform current distribution in the current path. A third mirror region is positioned on the current spreading region. The second and third mirror regions cooperate to provide a complete distributed Bragg reflector.

High speed implanted VCSEL

Planar index guided vertical cavity surface emitting laser (PIG VCSEL) utilizes index guiding to provide improved optical confinement and proton implantation to improve current confinement. Index guiding is achieved by etching index guide openings (holes or partial ridges) around the optical confinement region and may be adjusted by varying the etched volume of the index guide openings (holes and partial ridges). The top contact surface area is increased in the PIG VCSEL thereby lowering contact and device resistance to improve VCSEL performance further. The PIG VCSEL is a substantially planarized device for ease of manufacture.

Methods for forming index guided vertical cavity surface emitting lasers

Index guided vertical cavity surface emitting lasers

A tunable vertical cavity surface emitting laser (VCSEL) is formed by providing a gap in its laser cavity that can be adjusted to vary the gap distance therein to change the resonance of the cavity and the wavelength of photons that are generated. A pump laser provides a pump source of photons that are coupled into the laser cavity of the vertical cavity surface emitting laser. The vertical cavity surface emitting laser is coupled to a piezo-electric submount to form the gap in the laser cavity. The gap distance is adjusted to tune the vertical cavity surface emitting laser around its center wavelength by applying a voltage (i.e., an electric field) across the piezo-electric submount which causes mechanical stress therein. Alternate embodiments are disclosed including a joined unit of elements to form the tunable vertical cavity surface emitting laser as well as a system of elements to form the tunable vertical cavity surface emitting laser.

Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers

Growing community of inventors

Calabasas, CA, United States of America

Hsing-Chung Lee