Yangtze Memory Technologies Co., Ltd.

Hsing-An Lo

Li Zhang

Yi Zhou

Xinsheng Wang

Gaosheng Zhang

Xiongyu Wang

YuPing Xia

Fei Xie

In a method for fabricating a semiconductor device, a stack of alternating insulating layers and sacrificial layers are formed over a substrate. A staircase having a plurality of steps are formed in the stack. Each of the steps has a tread and a riser and further includes a respective pair of the insulating layer and the sacrificial layer over the insulating layer of the respective step. A dielectric layer is formed along the treads and risers of the steps and is doped with one or a combination of carbon, phosphorous, boron, arsenic, and oxygen. The sacrificial layers are further replaced with a conductive material to form word line layers that are arranged between the insulating layers. A plurality of word line contacts are formed to extend from the word line layers of the plurality of steps, and further extend through the dielectric layer.

Structures and methods for fabricating staircase regions of a three-dimensional NAND memory device

Growing community of inventors

Wuhan, China

Hsing-An Lo