Cmc Materials, Inc.

Hsin-Yen Wu

Jin-Hao Jhang

Kevin P Dockery

Cheng-Yuan Ko

Na Zhang

Chi-Rung Shie

Yang-Yao Lee

A chemical mechanical polishing composition for polishing tungsten or molybdenum comprises, consists essentially of, or consists of a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof, an anionic polymer or an anionic surfactant, and an optional amino acid surfactant. A method for chemical mechanical polishing a substrate including a tungsten layer or a molybdenum layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten layer or the molybdenum layer from the substrate and thereby polish the substrate.

CMP composition including anionic and cationic inhibitors

A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, anionic particles dispersed in the liquid carrier, an anionic polymer or surfactant, and a cationic polymer.

CMP composition including an anionic abrasive

Growing community of inventors

Kaohsiung, Taiwan

Hsin-Yen Wu