United Microelectronics Corp.

Hsin-Tuei Hsu

Wen-Jeng Lin

Yuang-Chang Lin

The present invention relates to a method of forming a self-aligned contact hole on a semiconductor wafer. The semiconductor wafer comprises a substrate, an array area and a periphery area. The array area comprises a first gate electrode and a second gate electrode adjacent to the first gate electrode. The periphery area comprises at least a third gate electrode. A first doped area is formed over each of two opposite sides of each gate electrode. A first spacer is formed on a wall of each of the two opposite sides of the third gate electrode in the periphery area. Then, a second spacer is formed on a wall of each of the two opposite sides of the first and second gate electrodes in the array area. The first spacers are thicker than the second spacers, and the second spacers between the first and second gate electrodes are internal walls of a self-aligned contact hole between the first and second gate electrodes.

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Chu-Tung, Taiwan

Hsin-Tuei Hsu