Ememory Technology Inc.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Toppoly Optoelectronics Corporation

Tpo Displays Corporation

Au Optronics Corporation

Andes Technology Corporation

Ememory Technologies Inc.

Hsin-Ming Chen

Meng-Yi Wu

Shih-Jye Shen

Ching-Hsiang Hsu

Ching-Sung Yang

Shih-Chen Wang

Hai-Ming Lee

Wen-Hao Ching

Hau-Yan Lu

Wei-Zhe Wong

Ming-Chou Ho

Wei-Ren Chen

Te-Hsun Hsu

Chrong-Jung Lin

Chih-Hao Huang

Po-Hao Huang

Chun-Hung Lu

Yen-Hsin Lai

Lun-Chun Chen

Wen-Ting Chu

Ya-Chin King

Shao-Chang Huang

Shui-Hung Chen

Chrong Jung Lin

Yueh-Chia Wen

Yung-Hsiang Chen

Di-Son Kuo

Tung-Cheng Kuo

Yaw-Ming Tsai

Wei-Ming Ku

Chi-Chang Lai

Hong-Ping Tsai

Chu-Jung Shih

Chuan-Li Chang

Ping-Lung Ho

Chiun-Chi Shen

Shih-Chan Huang

Chih-Min Wang

Chin-Yi Chen

Cheng-Yen Shen

Chang Song Lin

Sheng-Yu Wang

Chrong Jun Lin

Jiun-Ren Chen

Hau-yan Lu

An antifuse-type one time programming memory cell includes a select device, a following device and an antifuse transistor. A first terminal of the select device is connected with a bit line. A second terminal of the select device is connected with a first node. A select terminal of the select device is connected with a word line. A first terminal of the following device is connected with the first node. A second terminal of the following device is connected with a second node. A control terminal of the following device is connected with a following control line. A first drain/source terminal of the antifuse transistor is connected with the second node. A gate terminal of the antifuse transistor is connected with an antifuse control line. A second drain/source terminal of the antifuse transistor is in a floating state.

Antifuse-type one time programming memory cell and cell array structure with same

A random code generator includes an address Y decoder, an address X decoder, a PUF entropy pool, a processing circuit and an entropy key storage circuit. The address Y decoder includes plural Y control lines. The address Y decoder selectively activates the plural Y control lines according to a first address Y signal. The address X decoder includes plural X control lines. The address X decoder selectively activates the plural X control lines according to a first address X signal. The PUF entropy pool generates an output data according to the activated Y control lines and the activated X control lines. When the random code generator is in a normal working state, the processing circuit processes the output data into a random code according to at least one entropy key from the entropy key storage circuit.

Random code generator

The communication system includes a communication buffer and a communication terminal. The communication buffer includes a physical unclonable function (PUF) device, and the communication buffer provides a security key generated by the PUF device. The communication terminal is coupled to the communication buffer, and transmits a mapping request to the communication buffer to ask for the security key. The communication terminal manipulates the transmission data with the security key to generate the encrypted data, and transmits the encrypted data to the communication buffer. The communication buffer further restores the transmission data from the encrypted data according to the security key.

Anti-counterfeit communication system

An entanglement and recall system includes an antifuse-type PUF cell array and a processing circuit. The antifuse-type PUF cell array generates at least one key. The processing circuit is connected with the antifuse-type PUF cell array to receive the at least one key. While an entanglement action is performed, the processing circuit receives a plain text and the at least one key and generates a cipher text according to the plain text and the at least one key. While a recall action is performed, the processing circuit receives the cipher text and the at least one key and generates the plain text according to the cipher text and the at least one key.

Entanglement and recall system using physically unclonable function technology

A security system includes a physical unclonable function circuit, a write-in protection circuit, a memory, and a readout decryption circuit. The physical unclonable function circuit provides a plurality of random bit strings. The write-in protection circuit receives a write-in address and original data, and includes an address scrambling unit. The address scrambling unit generates a scrambled address by scrambling a write-in address according to a random bit string provided by the physical unclonable function circuit. The memory stores the storage data corresponding to the original data according to the scrambled address. The readout decryption circuit reads out the storage data from the memory according to the write-in address to derive the original data.

Security system using random number bit string

A random code generator is installed in a semiconductor chip and includes a PUF cell array, a control circuit and a verification circuit. The PUF cell array includes m&#xd7;n PUF cells. The control circuit is connected with the PUF cell array. While a enroll action is performed, the control circuit enrolls the PUF cell array. The verification circuit is connected with the PUF cell array. While a verification action is performed, the verification circuit determines that p PUF cells of the PUF cell array are normal PUF cells and generates a corresponding a mapping information, wherein p is smaller than m&#xd7;n. While the semiconductor chip is enabled, the control circuit reads states of the p normal PUF cells of the PUF cell array according to the mapping information and generates a random code according to the states.

Random code generator and associated random code generating method

A security system with entropy bits includes a physically unclonable function circuit, and a security key generator. The physically unclonable function circuit provides a plurality of entropy bit strings. The security key generator generates a security key by manipulating a manipulation bit string derived from the plurality of entropy bit strings according to an operation entropy bit string. Each bit of the operation entropy bit string is used to determine whether to perform a corresponding operation to the manipulation bit string.

Security system with entropy bits

A physically unclonable function unit includes and anti-fuse transistor and a control circuit. The anti-fuse transistor has a first terminal, a second terminal, and a gate terminal. The control circuit is coupled to the anti-fuse transistor. During an enroll operation, the control circuit applies an enroll voltage to the gate terminal of the anti-fuse transistor and applies a reference voltage to the first terminal and the second terminal of the anti-fuse transistor. The enroll voltage is higher than the reference voltage, and is high enough to create a rupture path on the gate terminal to the first terminal or to the second terminal.

Physically unclonable function unit with one single anti-fuse transistor

An antifuse physically unclonable function (PUF) unit includes a first sub-antifuse cell, a second sub-antifuse cell, a connection circuit, a first copying circuit and a first reading circuit. The first sub-antifuse cell includes a first antifuse transistor. The second sub-antifuse cell includes a second antifuse transistor. The connection circuit is connected between a source/drain terminal of the first antifuse transistor and a source/drain terminal of the second antifuse transistor. The first copying circuit is connected with the first sub-antifuse cell, and includes a third antifuse transistor. The first reading circuit is connected with the first copying circuit. Moreover, the first reading circuit generates a random code according to a state of the third antifuse transistor.

Antifuse physically unclonable function unit and associated control method

A semiconductor apparatus with fake functionality includes a logic device and at least one fake device. The logic device is formed on a substrate and turned on by a bias voltage. The fake device is also formed on the substrate. The fake device cannot be turned on by the same bias voltage applied on the logic device.

Semiconductor apparatus with fake functionality

A non-volatile memory (NVM) includes a fin structure, a first fin field effect transistor (FinFET), a second FinFET, an antifuse structure, a third FinFET, and a fourth FinFET. The antifuse structure is formed on the fin structure and has a sharing gate, a single diffusion break (SDB) isolation structure, a first source/drain region, and a second source/drain region. The SDB isolation structure isolates the first source/drain region and the second source/drain region. The first FinFET, the second FinFET and the first antifuse element compose a first one time programmable (OTP) memory cell, and the third FinFET, the fourth FinFET and the second antifuse element compose a second OTP memory cell. The first OTP memory cell and the second OTP memory cell share the antifuse structure.

Non-volatile memory and method for programming and reading a memory array having the same

A method for programming an antifuse-type OTP memory cell is provided. Firstly, a first program voltage is provided to a gate terminal of an antifuse transistor. A first bit line voltage is transmitted to the antifuse transistor. A first voltage stress with a first polarity is provided to a gate oxide layer of the antifuse transistor to form a weak path between the gate terminal and the first drain/source terminal of the antifuse transistor. Secondly, a second program voltage is provided to the gate terminal of the antifuse transistor. A second bit line voltage is transmitted to the antifuse transistor. A second voltage stress with a second polarity is provided to the gate oxide layer of the antifuse transistor. Consequently, a program current is generated along the weak path to rupture the gate oxide layer above the first drain/source terminal.

Method for programming antifuse-type one time programmable memory cell

A memory cell includes a first select transistor, a first following gate transistor, an antifuse transistor, a second following gate transistor, and a second select transistor. The first select transistor has a first terminal coupled to a bit line, a second terminal, and a gate terminal coupled to a word line. The first following gate transistor has a first terminal coupled to the second terminal of the first select transistor, a second terminal, and a gate terminal coupled to a following control line. The antifuse transistor has a first terminal coupled to the second terminal of the first following gate, and a gate terminal coupled to an antifuse control line. The second following gate transistor and the second select transistor are disposed symmetrically to the first following gate transistor and the second select transistor with respect to the antifuse transistor.

One-time programmable memory array having small chip area

A one time programming memory cell includes a selecting circuit, a first antifuse storing circuit and a second antifuse storing circuit. The selecting circuit is connected with a bit line and a word line. The first antifuse storing circuit is connected between a first antifuse control line and the selecting circuit. The second antifuse storing circuit is connected between a second antifuse control line and the selecting circuit.

One time programming memory cell and memory array for physically unclonable function technology and associated random code generating method

A one time programmable (OTP) memory cell includes a select gate transistor, a following gate transistor, and an antifuse varactor. The select gate transistor has a first gate terminal, a first drain terminal and a first source terminal. The following gate transistor has a second gate terminal, a second drain terminal and a second source terminal coupled to the first drain terminal. The antifuse varactor has a third gate terminal, a third drain terminal, and a third source terminal coupled to the second drain terminal. The select gate transistor, the following gate transistor, and the antifuse varactor are formed on a substrate structure.

One-time programmable memory cell capable of reducing leakage current and preventing slow bit response, and method for programming a memory array comprising the same

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Hsinchu, Taiwan

Hsin-Ming Chen