Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsin-mei Lin

Chih-Wei Chang

Tsung-Han Wu

Cheng-Han Yang

I-Chun Hsieh

Hsi-Yen Chang

A method for lithography patterning includes depositing a target layer over a substrate, the target layer including an inorganic material; implanting ions into the target layer, resulting in an ion-implanted target layer; forming a photoresist layer directly over the ion-implanted target layer; and exposing the photoresist layer to radiation in a photolithography process. The ion-implanted target layer reduces reflection of the radiation back to the photoresist layer during the photolithography process.

Anti-reflective coating by ion implantation for lithography patterning

A method includes depositing a target layer over a substrate; reducing a reflection of a light incident upon the target layer by implanting ions into the target layer, resulting in an ion-implanted target layer; coating a photoresist layer over the ion-implanted target layer; exposing the photoresist layer to the light using a photolithography process, wherein the target layer reduces reflection of the light at an interface between the ion-implanted target layer and the photoresist layer during the photolithography process; developing the photoresist layer to form a resist pattern; etching the ion-implanted target layer with the resist pattern as an etch mask; processing the substrate using at least the etched ion-implanted target layer as a process mask; and removing the etched ion-implanted target layer.

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Hsinchu, Taiwan

Hsin-mei Lin