Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsin Kuan

Jong-I Mou

Chia-Wei Liu

Jo Fei Wang

Sunny Wu

Jun Xiu Liu

Andy Tsen

Chi-Hsuen Chang

Tzu-Chiang Sung

Chung-I Chen

Chih-Sheng Shih

Rann-Shyan Yeh

Zhi-Cheng Chen

Jieh-Ting Cheng

A method for providing bin-based control when manufacturing integrated circuit devices is disclosed. The method comprises performing a plurality of processes on a plurality of wafer lots; determining a required bin quantity, an actual bin quantity, and a projected bin quantity; comparing the determined required bin quantity with the determined actual bin quantity and determined projected bin quantity; and modifying at least one of the plurality of processes on the plurality of wafer lots if the determined actual bin quantity and determined projected bin quantity fail to satisfy the determined required bin quantity.

Method for bin-based control

A high-voltage transistor device with an interlayer dielectric (ILD) etch stop layer for use in a subsequent contact hole process is provided. The etch stop layer is a high-resistivity film having a resistivity greater than 10 ohm-cm, thus leakage is prevented and breakdown voltage is improved when driving a high voltage greater than 5V at the gate site. A method for fabricating the high-voltage device is compatible with current low-voltage device processes and middle-voltage device processes.

High-voltage transistor device having an interlayer dielectric etch stop layer for preventing leakage and improving breakdown voltage

Growing community of inventors

Hsinchu, Taiwan

Hsin Kuan