United Microelectronics Corp.

Richtek Technology Corporation, R.o.c

Hsin-Kai Chiang

Chih-Yu Tseng

Chiawei Liao

Cheng-Wen Fan

Victor-Chiang Liang

Yu-Jen Liu

Kai-Ling Chiu

Kun-Szu Tseng

Chih-Chen Hsueh

Yi-Ping Huang

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; forming a shallow trench isolation (STI) around the fin-shaped structure; forming a gate structure on the fin-shaped structure and the STI and the fin-shaped structure directly under the gate structure includes a first epitaxial layer; forming a source region having first conductive type adjacent to one side of the gate structure; and forming a first drain region having a second conductive type adjacent to another side of the gate structure.

Semiconductor device and method for fabricating the same

The present invention discloses a dimming control circuit and a method for generating analog and digital signals according to an analog control signal. The dimming control circuit according to the present invention comprises an input for receiving an analog control signal; a digital dimming circuit for receiving the analog control signal and generating a digital signal; an analog dimming circuit for receiving the analog control signal and generating an analog signal; and a power circuit enabled by the digital signal for converting a supply voltage to an output voltage according to the analog signal generated by the analog dimming circuit.

Dimming control circuit and method for generating analog and digital signals according to one analog control signal

A resistor is disclosed. The resistor is disposed on a substrate, in which the resistor includes: a dielectric layer disposed on the substrate; a polysilicon structure disposed on the dielectric layer; two primary resistance structures disposed on the dielectric layer and at two ends of the polysilicon structure; and a plurality of secondary resistance structures disposed on the dielectric layer and interlaced with the polysilicon structures.

Metal gate transistor with resistor

Growing community of inventors

Hsinchu, Taiwan

Hsin-Kai Chiang