United Microelectronics Corp.

Hsin Jung Liu

Min-Chuan Tsai

Chun-Tsen Lu

Wei-Chuan Tsai

Kuo-Chin Hung

Jui-Ming Yang

Chun-Lin Chen

Yi Han Liao

Kun Ju Li

A method of manufacturing a semiconductor structure, comprising: providing a preliminary structure having a first region and a second region and comprising a plurality of first trenches in the first region; forming a metal layer filling the first trenches covering on the preliminary structure, wherein the metal layer comprises a concave portion in the second region and the concave portion defines an opening; forming a metal nitride layer on the metal layer by an nitride treatment; and performing a planarization process to remove the metal nitride layer and a portion of the metal layer to expose the preliminary structure.

Fabricating method of semiconductor structure

Growing community of inventors

Kanding Township, Taiwan

Hsin Jung Liu