Innolux Corporation

Innocare Optoelectronics Corporation

National Yang Ming Chiao Tung University

Genesis Photonics Inc.

Hsin-Hung Lin

Ker-Yih Kao

Chih-Hao Wu

Jung-Fang Chang

Zhi-Hong Wang

Kuan-Feng Lee

Yuan-Lin Wu

Li-Wei Sung

Chao-Hsiang Wang

Yun-Li Li

Ya-Hsiang Tai

Cheng-Hsu Chou

Hui-Min Huang

Yi-Ching Chen

Gwo-Jiun Sheu

Yu-Lun Hsieh

Chin-Chi Chen

Tai-Wei Wu

Tai-Cheng Tsai

Shou-Wen Hsu

Ping-Tsung Tsai

Pei-Yi Huang

Cheng Che Tu

Shou-Pu Yeh

Te-Yi Chen

Han-Tsung Su

A circuit for sensing an X-ray including a switching element, a storage element, a sensing element and a branching element. The storage element electrically coupled to the switching element. The sensing element electrically coupled to the switching element. The branching element electrically coupled between the storage element and the sensing element.

Circuit for sensing X-ray

An X-ray device including a sensing panel is provided. The sensing panel includes a first pixel and a second pixel. The second pixel is disposed adjacent to the first pixel in a top view direction. The first pixel includes a first photoelectric conversion layer. The second pixel includes a second photoelectric conversion layer. The first photoelectric conversion layer and the second photoelectric conversion layer belong to different layers.

X-ray device

A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.

Radiation sensing device

The disclosure provides a processing circuit adapted to read out a sensing voltage of an X-ray sensor and a signal processing method of a sampling circuit. The processing circuit includes an amplifier and the sampling circuit. An inverting input terminal of the amplifier is coupled to the X-ray sensor. The sampling circuit is coupled to an output terminal of the amplifier. The sampling circuit obtains a first voltage, a second voltage, and a sampling voltage of the X-ray sensor in different periods. The sampling voltage is between the first voltage and the second voltage. In the readout period, the sampling circuit subtracts the second voltage from the sampling voltage to obtain a third voltage, subtracts the second voltage from the first voltage to obtain a fourth voltage, and divides the third voltage by the fourth voltage to read out the sensing voltage of the X-ray sensor.

Processing circuit and signal processing method of sampling circuit

A photo detector including a transistor and a charge storing component is provided. The transistor includes a gate, a source and a drain. The charge storing component is electrically connected with the transistor, and includes a top electrode and a bottom electrode. The source of the transistor, the drain of the transistor and the bottom electrode of the charge storing component are formed of a semiconductor layer.

Photo detector

Radiation sensing device and operating method thereof

A panel device includes a substrate, a common electrode, and an electrostatic protection component. The substrate includes an active area and a peripheral area, the peripheral area is outside of the active area, and a plurality of signal lines is disposed on the substrate. The common electrode is disposed on the substrate, and at least part of the common electrode is disposed in the peripheral area. The electrostatic protection component is disposed in the peripheral area of the substrate and electrically connected to one of the plurality of signal lines and the common electrode, and the electrostatic protection component includes a first double-gate transistor. The first double-gate transistor includes a first gate, a second gate, a first electrode and a second electrode. The first gate is electrically connected to the first electrode, and the second gate is electrically connected to the second electrode.

Panel device and electronic device

A display panel includes a first substrate, and the first substrate includes a base plate; a first conductive line disposed on the base plate and extending along the first direction; a second conductive line and a third conductive line disposed on the base plate and extending along the second direction; a contact pad positioned between the second and third conductive lines; a semi-conductive layer connecting the contact pad and the second conductive line, and the semi-conductive layer having a thickness d; and a pixel electrode connecting the contact pad. The semi-conductive layer has a channel width W (&#x3bc;m) and a channel length L (&#x3bc;m) between the contact pad and the second conductive line, and a pixel distance Px (&#x3bc;m) between the second and third conductive lines along the first direction, wherein the channel width W is conformed to the following equation: 

Display panel

An active element array substrate including a substrate, a first metal layer, a first insulation layer, a semiconductor layer, a first patterned conductive layer, a second metal layer, a second insulation layer, and a second patterned conductive layer is provided. The semiconductor layer is disposed on the first insulation layer. The first patterned conductive layer is disposed on the first insulation layer and covers a partial region of the semiconductor layer. The second metal layer is disposed on the first patterned conductive layer. The second insulation layer is disposed on the second metal layer and covers at least a partial region of the second metal layer, the first patterned conductive layer, the semiconductor layer, and the first insulation layer. The second patterned conductive layer is disposed on the second insulation layer and overlapped with the first patterned conductive layer. A display panel is also provided.

Active element array substrate and display panel

A display panel comprises a TFT substrate and a display medium layer. The display medium layer is disposed on the TFT substrate. The TFT substrate comprises a TFT and a substrate. The TFT is disposed on the substrate and comprises a gate, a metal oxide layer, a source, a drain and a protection layer. The gate is disposed corresponding to the metal oxide layer. The protection layer is disposed on the metal oxide layer. Each of the source and the drain contacts the metal oxide layer through an opening of the protection layer. One side of the gate or one side of the metal oxide layer partially overlaps at least one of the openings. In addition, a display device is also disclosed.

Display panel and display device

A thin film transistor is provided, which includes a gate electrode on a substrate; a channel layer overlapping the gate electrode; a dielectric layer between the gate electrode and the channel layer; a source electrode and a drain electrode electrically connecting to the channel layer; a passivation layer overlying the source electrode, the drain electrode, and the gate dielectric layer, wherein the channel layer includes two contact portions being in contact with the source electrode and the drain electrode, respectively, and a non-contact portion located between the two contact portions, and wherein one of the two contact portions has a first thickness in a first direction perpendicular to a surface of the substrate, and the non-contact portion has a second thickness less than the first thickness in the first direction.

Thin film transistor and display panel including the same

Disclosed is a thin film transistor including a gate electrode on a substrate. A gate dielectric layer is disposed on the gate electrode and the substrate, and source/drain electrodes are disposed on the gate dielectric layer overlying two edge parts of the gate electrode. A channel layer is disposed on the gate dielectric layer overlying a center part of the gate electrode, and the channel region contacts the source/drain electrodes. An insulating capping layer overlies the channel layer, wherein the channel layer includes an oxide semiconductor.

This disclosure provides a display apparatus which includes a substrate, first TFTs, scan lines and data lines connected to the first TFTs, and second TFTs for controlling inspection-use display signals; wherein each of the second TFTs includes: a first gate electrode disposed on the substrate; a first insulation layer disposed on the first gate electrode; an active unit disposed on the first insulation layer and having a source electrode electrically connected to one of the data lines, an active layer including an oxide semiconductor, and a drain electrode; a second insulation layer disposed on the active unit; and a second gate electrode disposed on the second insulation layer; wherein the first TFTs, the scan lines, and the data lines are disposed in a display area on the substrate, and the second TFTs are disposed in an area other than the display area on the substrate.

Display apparatus

A detection apparatus for light-emitting diode chip comprising a substrate with the function of photoelectric conversion and a probing device is disclosed. The substrate is designed to bear at least one light-emitting diode chip. The probing device comprises a power supply and at least two conductive elements. The two ends of the conductive elements are respectively electrically connected to the light-emitting diode chip and the power supply to enable the light-emitting diode chip to emit light beams. Some of the light beams are emitted from the light-emitting diode chip toward the substrate such that the light beams emitted by the light-emitting diode chip are converted into an electric signal by the substrate.

Growing community of inventors

Miao-Li County, Taiwan

Hsin-Hung Lin