Mediatek Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

TSMC Solid State Lighting Ltd.

Chi Mei Corporation

Mediatek Singapore Pte. Ltd.

Prilit Optronics, Inc.

Epistar Corporation

Chi Mei Optoelectronics Corporation

Lucent Technologies Inc.

Alcatel-Lucent USA Inc.

Himax Technologies, Inc.

National Cheng-Kung University

Hsin-Hung Chen

Hsiang-Hui Chang

Yu-Sheng Tang

Ching-Yi Chen

Hao-Yu Yang

Chun-Pang Wu

Dun-Nian Yaung

Jen-Cheng Liu

Ling-Wei Ke

Tzu-Wen Shih

Caiyi Wang

Min-Feng Kao

Biing-Seng Wu

Hsing-Chih Lin

Ping-Ying Wang

Po-Sen Tseng

Manel Collados Asensio

Tser-Yu Lin

Tai-Yuan Yu

Chieh-Hsun Hsiao

Hao-Wei Ku

Chun-Liang Kuo

Alexander Kalnitsky

Wen-De Wang

Hsiao-Wen Lee

Chih-Yuan Lin

Chung Yu Wang

Bernard Mark Tenbroek

Chi-Hsueh Wang

Jonathan Richard Strange

Pei-Shiun Chung

Yung-Yu Lin

Jaesik Lee

Chih-Jung Chen

Sheng-Shin Guo

Jong-Woei Chen

Wei-Hsin Tseng

Chi Xiang Tseng

Jenwei Ko

Ming-Chou Wu

Shang-Yu Tsai

Kuo-Hao Chen

Wei-Chan Tseng

Narayanan Baskaran

Chun-Hao Liao

Tai Yuan Yu

Wei-Kai Chang

Chung-Hao Wang

Chin-Cheng Chien

Chia-Ping Lai

Chien-Wei Kuan

Chen-Yen Ho

Wen-Jia Hsieh

Hsing-Ying Lee

Yi-Chun Lo

Tzung-Ren Wang

Tien-Ming Lin

Sheng-Hong Yan

Wen-Jyh Sah

George Chien

Yu-Hsiang Tsai

Tien-Min Lin

Shih-Chi Shen

Wen-Chang Lee

Yangjian Chen

Chi-Yun Wang

Dimitris Nalbantis

Tien-Jen Lin

Tung-Yi Lin

Jun Hu

Tzyuan Shiu

Jiunn-Der Liao

Jung-You Chen

I-No Liao

Chuan-Pin Chen

Cheng-Feng Lin

Chih-Chiang Weng

Chung-Ping Huang

Chueh-Yang Tsai

Hsiu-Fang Hsiao

Yen Lin Huang

Chi-Tsan Chen

Qian-Zhi Huang

Paul Muller

Wei-Che Tsai

A micro-light-emitting diode (microLED) display panel includes a substrate and a driver bonded on the substrate. The driver includes a signal terminal coupled with a signal wire disposed on the substrate; and a repair terminal associated with the signal terminal, the repair terminal coupled with a repair wire disposed on the substrate.

Micro-light-emitting diode display panel

A semiconductor structure includes a substrate, a conductive via and a first insulation layer. The conductive via is through the substrate. The first insulation layer is between the substrate and the conductive via. A first surface of the first insulation layer facing the substrate and a second surface of the first insulation layer facing the conductive via are extended along different directions.

Semiconductor structure and manufacturing method thereof

A transmission interface between at least a first module and a second module is proposed. The transmission interface includes at least two physical transmission mediums. Each physical transmission medium is arranged to carry a multiplexed signal in which at least two signals are integrated. The at least two physical transmission mediums include a first physical transmission medium arranged to carry a first multiplexed signal including a first IF signal and a reference clock signal. The first IF signal and the reference clock signal are at different frequencies.

Method for transferring signals via transmission interface and communications apparatus utilizing the same

A micro-light-emitting diode (microLED) display panel includes a display area divided into a plurality of blocks; a plurality of drivers that drive microLEDs of the blocks respectively; and at least one timing controller that controls the drivers. In each block, anodes of microLEDs in a same row are connected to a corresponding data line, and cathodes of microLEDs in a same column are connected to a corresponding common line.

A micro-light-emitting diode (microLED) display panel includes a timing controller, and a plurality of drivers controlled by the timing controller and arranged in an order according to distance from the timing controller. Each driver includes a buffer that buffers a signal before being sent to a succeeding driver.

Micro-light-emitting diode display panel having a plurality of drivers connected by buffers

A package or a chip including a linear amplifier and a power amplifier is provided, wherein the linear amplifier is configured to receive an envelope tracking signal to generate an amplified envelope tracking signal, the power amplifier is supplied by an envelope tracking supply voltage comprising a DC supply voltage and the amplified envelope tracking signal, and the power amplifier is configured to receive an input signal to generate an output signal.

Envelope tracking supply modulator topology for wipe-bandwidth radio frequency transmitter

A transmission interface between at least a master module and a slave module is proposed. The transmission interface includes a predetermined number of physical transmission medium(s). Each physical transmission medium is arranged to carry a multiplexed signal in which at least two signals are integrated, and the predetermined number is not smaller than a number of intermediate frequency (IF) stream(s) to be transmitted.

An optical plate with protrusions, an optical structure, a backlight module and a display device are provided. The optical plate includes a main body and several protrusions. The main body has a first surface. The protrusions are formed on and projected from the first surface. An area ratio of the protrusions to the first surface is in a range of 0.03&#x2dc;35%. The protrusions have a pitch in a range of 0.5&#x2dc;10 mm, and a portion of the first surface other than the protrusions has a first center line mean roughness Ra in a range of 0.01&#x2dc;0.1 &#x3bc;m.

Optical plate with protrusions, optical structure, backlight module and display device

A semiconductor device includes a semiconductor substrate, an underlying insulation layer, a conductive via and a sidewall insulation layer. The underlying insulation layer is over the semiconductor substrate. The conductive via is through the semiconductor substrate and the underlying insulation layer. The sidewall insulation layer is between the semiconductor substrate and the conductive via. The sidewall insulation layer includes a protrusion stopping at an interface between the semiconductor substrate and the underlying insulation layer, and protruding outwardly into the semiconductor substrate.

Semiconductor device and manufacturing method thereof

The invention provides method and associated signal system improving mitigation of injection-pulling effect for an oscillator which generates an output clock under control of a control signal. The method may include: by a loop filter, filtering a deviation signal to form a filtered signal; by a SIL (self-injection locked) controller, forming an auxiliary signal which tracks the deviation signal or a phase difference between a reference clock and an output signal resulting from the output clock; and, forming the control signal by summing the filtered signal and the auxiliary signal.

Method and associated signal system improving mitigation of injection-pulling effect

A semiconductor device includes: a conductive structure, a conductive bump extending into the conductive structure and contacting the conductive structure along a first surface, the conductive bump configured to interface with an external semiconductor device at a second surface opposite the first surface, the conductive bump being wider along the first surface than the second surface.

Laterally extended conductive bump buffer

A semiconductor device includes: a gate structure on a substrate; a raised source/drain region adjacent to the gate structure; a channel region under the gate structure; and a protection layer between the substrate and the raised source/drain region. The protection layer is interposed between the substrate and the raised source/drain region. An atom stacking arrangement of the protection layer is different from the substrate and the raised source/drain region.

A through via structure includes a semiconductor substrate, an underlying insulation layer, a conductive via and a sidewall insulation layer. The underlying insulation layer is over the semiconductor substrate. The conductive via is through the semiconductor substrate and the underlying insulation layer. The sidewall insulation layer is between the semiconductor substrate and the conductive via. The sidewall insulation layer includes a protrusion proximal to an interface between the semiconductor substrate and the underlying insulation layer, and protruding outwardly into the semiconductor substrate.

Through via structure, semiconductor device and manufacturing method thereof

According to at least one aspect, a communication system is provided. The communication system includes a power amplifier configured to amplify an input signal to generate an amplified output signal and provide the amplified output signal to an antenna, a power supply coupled to the power amplifier and configured to provide power to the power amplifier based on a power supply control signal, and a controller coupled to the power supply. The controller is configured to identify a target transmit power level for transmission of a wireless signal, generate the power supply control signal based on the target transmit power level using information indicative of a relationship between the target transmit power level and a setting of the power supply, generate performance information indicative of a characteristic of the communication system when the wireless signal is transmitted, and update the information indicative of the relationship using the performance information.

Adaptive power amplifier supply with pre-distortion mechanism

A semiconductor device includes a gate structure on a substrate; a protection layer on the gate structure; a source/drain region adjacent to the gate structure; and an interconnect plug on the source/drain region. The gate structure includes a gate electrode including a top surface; and a sidewall spacer interfacing a sidewall of the gate electrode. The protection layer covers at least a first portion of the top surface and the sidewall spacer. The protection layer is interposed between the interconnect plug and the gate electrode.

Growing community of inventors

Hsinchu, Taiwan

Hsin-Hung Chen