Pixart Imaging Incorporated

Pixart Imaging Incorporation

Wistron Neweb Corporation

United Microelectronics Corp.

Pixart Imaging Inc., R.o.c.

Hsin-Hui Hsu

Chuan-Wei Wang

Sheng-Ta Lee

Chih-Ming Sun

Ming-Han Tsai

Bau-Yi Huang

Sen-Huang Huang

Chih-Hung Lu

Chin-Poh Pang

Wen-Kuei Lo

Tzuh-Suan Wang

Chi-Wen Tsai

WeiChung Wang

Sheng-Chieh Chang

Wei-Chung Wang

De-Yuan Wu

The present invention discloses a manufacturing method for a semiconductor device. The manufacturing method includes: providing a substrate; forming a semiconductor stacked structure on the substrate; forming at least apart of a stacked cap layer on the semiconductor stacked structure, wherein the part of the stacked cap layer includes a nitride layer; removing a part of the nitride layer; forming the rest part of the stacked cap layer; forming a protection layer on the stacked cap layer, and etching the protection layer to form an opening, wherein the nitride layer is not exposed by the opening; and introducing an etchant material into the opening to etch the substrate. The present invention also provides a semiconductor device made by the method.

Semiconductor device and manufacturing method therefor

This invention provides a MEMS device, including: a mass structure having at least one anchor; at least one flexible structure connected with the mass structure at the at least one anchor; a plurality of top electrodes located above the mass structure and forming a top capacitor circuit with the mass structure; and a plurality of bottom electrodes located under the mass structure and forming a bottom capacitor circuit with the mass structure. The projections of the plural top electrodes on the mass structure along a normal direction of the mass structure are located at opposite sides of the anchor, and the projections of the plural bottom electrodes on the mass structure along a normal direction of the mass structure are located at opposite sides of the anchor. This invention also provides a MEMS compensation structure.

Micro-electro-mechanical system device and micro-electro-mechanical system compensation structure

The invention provides a MEMS device with enhanced structural strength. The MEMS device includes a plurality of metal layers, including a top metal layer with a plurality of metal segments. The metal segments are individually connected to an adjacent metal layer immediately under the top metal layer through at least one supporting pillar, and there is no dielectric layer between the metal segments and the adjacent metal layer immediately under the top metal layer. The metal layers except the top metal layer are respectively connected to their adjacent metal layers through at least one supporting pillar and a dielectric layer filling in between.

Micro-electro-mechanical system device with enhanced structural strength

A MEMS package structure, including a substrate, an interconnecting structure, an upper metallic layer, a deposition element and a packaging element is provided. The interconnecting structure is disposed on the substrate. The MEMS structure is disposed on the substrate and within a first cavity. The upper metallic layer is disposed above the MEMS structure and the interconnecting structure, so as to form a second cavity located between the upper metallic layer and the interconnecting structure and communicates with the first cavity. The upper metallic layer has at least a first opening located above the interconnecting structure and at least a second opening located above the MEMS structure. Area of the first opening is greater than that of the second opening. The deposition element is disposed above the upper metallic layer to seal the second opening. The packaging element is disposed above the upper metallic layer to seal the first opening.

MEMS package structure

A MEMS (Micro-Electro-Mechanical-System) structure preventing stiction, comprising: a substrate; and at least two structural layers above the substrate, wherein at least one of the at least two structural layers is a movable part, and anyone or more of the at least two structural layers is provided with at least one bump to prevent the movable part from sticking to another portion of the MEMS structure.

MEMS structure preventing stiction

The present invention discloses a MEMS (Micro-Electro-Mechanical System) integrated chip with cross-area interconnection, comprising: a substrate; a MEMS device area on the substrate; a microelectronic device area on the substrate; a guard ring separating the MEMS device area and the microelectronic device area; and a conductive layer on the surface of the substrate below the guard ring, or a well in the substrate below the guard ring, as a cross-area interconnection electrically connecting the MEMS device area and the microelectronic device area.

MEMS integrated chip with cross-area interconnection

A method for fabricating a MEMS resonator is provided. A stacked main body including a silicon substrate, a plurality of metallic layers and an isolation layer is formed and has a first etching channel extending from the metallic layers into the silicon substrate. The isolation layer is filled in the first etching channel. The stacked main body also has a predetermined suspended portion. Subsequently, a portion of the isolation layer is removed so that a second etching channel is formed and the remained portion of the isolation layer covers an inner sidewall of the first etching channel. Afterwards, employing the isolation layer that covers the inner sidewall of the first etching channel as a mask, an isotropic etching process through the second etching channel is applied to the silicon substrate, thereby forming the MEMS resonator suspending above the silicon substrate. A micro electronic device is also provided.

Micro electronic device having CMOS circuit and MEMS resonator formed on common silicon substrate

A microelectronic device including a substrate, at least a semi-conductor element, an anti metal ion layer, a non-doping oxide layer and a MEMS structure is provided. The substrate has a CMOS circuit region and a MEMS region. The semi-conductor element is configured within the CMOS circuit region of the substrate. The anti metal ion layer is disposed within the CMOS circuit region of the substrate and covers the semi-conductor element. The non-doping oxide layer is disposed on the substrate within the MEMS region. The MEMS structure is partially suspended above the non-doping oxide layer. The present invention also provides a MEMS package structure and a fabricating method thereof.

Microelectronic device and MEMS package structure and fabricating method thereof

The present invention discloses a MEMS (Micro-Electro-Mechanical System) chip and a method for making the MEMS chip. The MEMS chip comprises: a first substrate having a first surface and a second surface opposing each other; a microelectronic device area on the first surface; a first MEMS device area on the second surface; and a conductive interconnection structure electrically connecting the microelectronic device area and the first MEMS device area.

MEMS integrated chip and method for making same

The present invention discloses a MEMS lithography mask with improved tungsten deposition topography and a method for making the same. The MEMS lithography mask includes: a pattern including at least two sections forming a conjunction with each other, each of the at least two sections having a width not less than a minimum width, the conjunction having a center and a plurality of corners, wherein at least one of the corners is inwardly recessed to reduce a width of the conjunction, the sections being for defining trenches on a substrate to be filled with tungsten as apart of a MEMS device, whereby the lowest height of the tungsten surface is not lower than 80% of the trench height.

Growing community of inventors

Hsinchu, Taiwan

Hsin-Hui Hsu