Powerchip Semiconductor Corporation

Hsin-Heng Wang

Chiu-Tsung Huang

Houng-Chi Wei

Shih-Hsiang Lin

Shih-Siang Lin

Shi-Hsien Chen

A junction-free NAND flash memory is described, including a substrate, memory cells, source/drain inducing (SDI) gates electrically connected with each other, and a dielectric material layer. The memory cells are disposed on the substrate, wherein each memory cell includes a charge storage layer. Each SDI gate is disposed between two neighboring memory cells. The dielectric material layer is disposed between the memory cells and the SDI gates and between the SDI gates and the substrate.

Junction-free NAND flash memory and fabricating method thereof

An image sensor contains a semiconductor substrate, a plurality of pixels defined on the semiconductor substrate, a photo conductive layer and a transparent conductive layer formed on the pixel electrodes of the pixels in order, and a shield device positioned between any two adjacent pixel electrodes. The shield device has a shield electrode and an isolation structure surrounding the shield electrode so that the shield electrode is isolated from the pixel electrodes and the photo conductive layer by the isolation structure.

Growing community of inventors

Hsinchu County, Taiwan

Hsin-Heng Wang