Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsin-Hao Yeh

Ching Yu Huang

Tze-Liang Lee

Chunyao Wang

Wei-Che Hsieh

Fu-Ting Yen

A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.

Forming low-stress silicon nitride layer through hydrogen treatment

Systems for annealing a wafer are provided. A system includes a wafer stage, a laser beam generator, and a controller. The laser beam generator is configured to generate a laser beam. The controller is configured to control the laser beam generator according to information regarding layout of a first semiconductor die of the wafer, so as to project the laser beam with a first laser parameter onto the first semiconductor die of the wafer on the wafer stage along at least one annealing orbit. The controller is configured to arrange the annealing orbit to partially cover the first semiconductor die of the wafer and to uncover a plurality of second semiconductor dies of the wafer.

System and method for annealing die and wafer

A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, removing a portion of the fin adjacent the dummy gate structure to form a first recess, depositing a stressor material in the first recess, removing at least a portion of the stressor material from the first recess, and after removing the at least a portion of the stressor material, epitaxially growing a source/drain region in the first recess.

FinFET device and method of forming same

A method for annealing a semiconductor die is provided. Information regarding layout of the semiconductor die is received. At least one annealing orbit on the semiconductor die is obtained according to the received information. An alignment procedure is performed on a plurality of alignment marks of the semiconductor die according to the received information. The semiconductor die is positioned according to the alignment marks. A laser beam with a first laser parameter is projected onto the positioned semiconductor die along the annealing orbit, so as to anneal a first portion of the positioned semiconductor die covered by the annealing orbit. The positioned semiconductor die is partially covered by the annealing orbit.

A method for forming a gaseous spacer in a semiconductor device and a semiconductor device including the gaseous spacer are disclosed. In an embodiment, the method may include forming a gate stack over a substrate, depositing a first gate spacer on sidewalls of the gate stack, epitaxially growing source/drain regions on opposite sides of the gate stack, and depositing a second gate spacer over the first gate spacer to form a gaseous spacer below the second gate spacer. The gaseous spacer may be disposed laterally between the source/drain regions and the gate stack.

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Taipei, Taiwan

Hsin-Hao Yeh