Intel Corporation

Hsin-Fen Li

Tahir Ghani

Willy Rachmady

Sudipto Naskar

Mohammad Hasan

Prashant Wadhwa

Christopher Parker

Jianqiang Lin

A transistor includes a first channel layer over a second channel layer, an epitaxial source structure coupled to a first end of the first and second channel layers and an epitaxial drain structure coupled to a second end of the first and second channel layers. The transistor includes a gate between the epitaxial source structure and the epitaxial drain structure, where the gate is above the first channel layer and between the first channel layer and the second channel layer. The transistor includes a first spacer of a first material, between the first and second channel layers includes. The first spacer has at least one convex sidewall that is between the gate and the epitaxial source structure and between the gate and the epitaxial drain structure. The transistor also includes a second spacer of a second material having substantially vertical sidewalls above the first channel layer.

Localized spacer for nanowire transistors and methods of fabrication

Growing community of inventors

Hillsboro, OR, United States of America

Hsin-Fen Li