National Yang Ming Chiao Tung University

Corning Incorporated

Tsinghua University

E Ink Holdings Inc.

Industrial Technology Research Institute

Delta Optoelectronics, Inc.

Hsin-Fei Meng

Hsiao-Wen Zan

Sheng-Fu Horng

Yu-Chiang Chao

Mingqian He

Robert George Manley

Karan Mehrotra

Ming-Kun Lee

Ming-Zhi Dai

Yu-Chi Lin

Wu-Wei Tsai

Chien-Cheng Liu

Jen-Chun Wang

Hao-Wen Chang

Shang-Yu Yu

Yu-Nung Mao

Sheng-Fu Hong

Ting-Wei Tung

Yi-Chu Wu

Yu-Fan Chang

Chih-Yu Chang

Lei Zhang

Chia-Hung Chu

Chuang-Chuang Tsai

Chang-Ho Liou

Cheng-Chung Chang

Yan-Rung Lin

Chain-Shu Hsu

Lai-Cheng Chen

Cheng-Hang Hsu

Chia-Ming Yang

Chien-Lung Wang

Tse-Pan Yang

Chun-Cheng Yeh

Yu-Chian Chiu

Wen-Hsing Liu

Jan-Hao Li

Tarng-Shiang Hu

Shi-Cheng Lin

Hua-Hsien Liao

Hsin-Rong Tseng

En-Chen Chen

Yun-Ru Hong

Mei-Peng Liou

Qian-Wei Lin

Hsiao-Tso Su

Chiung-Wen Chang

Lichi Lin

Pin-Hsuan Li

Jen-Chung Wang

Hsuan Chu

Wei-Lun Chen

Yen-Chu Chao

Ting-Hsuan Huang

Kai-Ruei Wang

Chang-Chiang Chen

Yung-Hsuan Hsu

Hao-Wu Lin

A gas sensor includes a first electrode, a gas detecting layer disposed on the first electrode, and an electric-conduction enhanced electrode unit being electrically connected to the first electrode and the gas detecting layer. The electric-conduction enhanced electrode unit includes an electric-conduction enhancing layer and a second electrode electrically connected to the electric-conduction enhancing layer. The electric-conduction enhancing layer is electrically connected to the gas detecting layer and is made of an electrically conductive organic material.

Gas sensor

A device for analyzing gas emitted from skin includes: an enclosure for collecting the gas emitted from skin, the enclosure having: an inlet through which a carrier gas is flown; and an outlet through which the carrier gas and the gas emitted from skin is flown into a vertical gas sensor, such that the vertical gas sensor has: a substrate; a collector layer; an emitter layer positively biased relative to the collector; a metal grid with a metal layer having openings, the metal grid located in between, but not in direct contact with, the collector and emitter; and an organic semiconductor (OSC) layer located in between the collector and emitter.

Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

High current OTFT devices with vertical designed structure and donor-acceptor based organic semiconductor materials

A gas sensor for sensing a gas in a humid environment includes a first electrode layer, a second electrode layer that is spaced apart from the first electrode layer, and a gas sensing layer that electrically interconnects the first electrode layer and the second electrode layer. The gas sensing layer is made of a hygroscopic electrically insulating material.

An organic light-emitting device includes a first electrode layer, an emission layer, an electron transporting layer, an electron injection layer, and a second electrode layer sequentially formed from bottom to top. The emission layer includes a guest light-emitting material, a first phenyl phosphine oxide derivative and a hole transporting material. The electron transporting layer includes a second phenyl phosphine oxide derivative and a third phenyl phosphine oxide derivative different from the second phenyl phosphine oxide derivative. One of the second phenyl phosphine oxide derivative and the third phenyl phosphine oxide derivative is identical to the first phenyl phosphine oxide derivative. The electron injection layer includes an alkaline metal compound.

Organic light-emitting device

Described herein are electronics that incorporate heterocyclic organic compounds. More specifically, described herein are organic electronics systems that are combined with donor-acceptor organic semiconductors, along with methods for making such devices, and uses thereof.

An organic light-emitting device includes a first electrode, a first light-emitting layer, a first low work function layer, a second low work function layer, a conductive etching-resistant layer, a first hole-injection layer, a second light-emitting layer, and a second electrode. The first light-emitting layer is disposed over the first electrode. The first low work function layer is disposed over the first light-emitting layer. The second low work function layer is disposed over the first low work function layer, and a work function of the second low work function layer is greater than a work function of the first low work function layer. The conductive etching-resistant layer is disposed over the second low work function layer. The first hole-injection layer is disposed over the conductive etching-resistant layer. The second light-emitting layer is disposed over the first hole-injection layer. The second electrode is disposed over the second light-emitting layer.

A metal oxide semiconductor transistor includes a gate, a metal oxide active layer, a gate insulating layer, a source, and a drain. The metal oxide active layer has a first surface and a second surface, and the first surface faces to the gate. The gate insulating layer is disposed between the gate and the metal oxide active layer. The source and the drain are respectively connected to the metal oxide active layer. The second surface defines a mobility enhancing region between the source and the drain. An oxygen content of the metal oxide active layer in the mobility enhancing region is less than an oxygen content of the metal oxide active layer in the region outside the mobility enhancing region. The metal oxide semiconductor transistor has high carrier mobility.

Metal oxide semiconductor transistor

A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.

Vertical electro-optical component and method of fabricating the same

A light detecting array structure and a light detecting module are provided. The light detecting array structure includes a plurality of first electrodes, a plurality of second electrodes, a first carrier selective layer, a second carrier selective layer, and a light-absorbing active layer. The second electrodes are disposed on one side of the first electrodes. Between the first electrodes and the second electrodes, a first carrier selective layer, a light-absorbing active layer and a second carrier selective layer are disposed. The light detecting module includes the light detecting array structure and a control unit. The control unit is coupled to the first electrodes and second electrodes, selectively provides at least two cross voltages between each of the first electrodes and each of the second electrodes, and reads photocurrents flowing through the first electrodes and second electrodes.

Light detecting array structure and light detecting module

The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.

Method for forming vertical type sensor

The present invention discloses a method for extracting of solar cell parameters. After illuminating the solar cell by different simulated solar luminosity with different illumination intensity, measured current and measured voltages of the solar cell are acquired and the series resistance of the solar cell is extracted based on the measured current and measured voltages. The root mean square error (RMSE) is used to determine the series resistance of the solar cell. Therefore, the parameters of the solar cell are extracted without presuming current-voltage functional form.

Method for parameters extraction of solar cells

The present invention discloses a nanoball solution coating method and applications thereof. The method comprises steps: using a scraper to coat a nanoball solution on a substrate to attach a plurality of nanoballs on the substrate; flushing or flowing through the substrate with a heated volatile solution to suspend the nanoballs unattached to the substrate in the volatile solution; and using the scraper to scrape off the volatile solution carrying the suspended nanoballs, whereby is simplified the process to coat nanoballs. The method can be used to fabricate nanoporous films, organic vertical transistors, and large-area elements and favors mass production.

Nanoball solution coating method and applications thereof

Growing community of inventors

Hsinchu, Taiwan

Hsin-Fei Meng