Ememory Technology Inc.

Hsin-Chou Liu

Ching-Sung Yang

Wei-Ren Chen

Wen-Hao Lee

A blood glucose test strip includes a base substrate, a calibration site, a test site and a non-volatile memory. The calibration site is disposed on the base substrate. A chemical reagent is applied on the calibration site. The test site is disposed on the base substrate. A chemical reagent is applied on the test site. The non-volatile memory is disposed on the base substrate. A calibration parameter is stored in the non-volatile memory. During a calibrating procedure, the calibration solution is dropped on the calibration site, a calibration parameter is calculated according to a first reaction result of the calibration solution and the chemical reagent, and the calibration parameter is stored in the non-volatile memory.

Blood glucose test strip and associated measuring method

An integrated circuit includes a core circuit and a function lock circuit. The core circuit includes at least one function block circuit. The function lock circuit is coupled to the core circuit. The function lock circuit includes a random number source, an entanglement circuit, and a memory. The random number source is configured to generate a random code. The entanglement circuit is coupled to the random number source and the core circuit and configured to generate an unlocking code according to the random code and a command signal. The memory is coupled to the entanglement circuit and configured to store the unlocking code. The at least one function block circuit of the core circuit is determined to be locked/unlocked according to a presence of the unlocking code.

Integrated circuit and data processing method for enhancing security of the integrated circuit

An integrated capacitance sensing module includes a silicon substrate, a first and a second and a third interlayer dielectric layers, plural conducting layers, a shielding layer, a lower and a upper sensing electrode layers, a protective coating layer. An embedded memory and a sensing circuit are constructed in the silicon substrate. The first interlayer dielectric layer covers the silicon substrate. The plural conducting layers are formed over the first interlayer dielectric layer. The shielding layer is formed over the plural conducting layers. The second interlayer dielectric layer covers the shielding layer. The lower sensing electrode layer is formed over the second interlayer dielectric layer. The third interlayer dielectric layer is formed over the lower sensing electrode layer. The upper sensing electrode layer is formed over the third interlayer dielectric layer. The protective coating layer covers the upper sensing electrode layer.

Growing community of inventors

Hsinchu County, Taiwan

Hsin-Chou Liu