Epistar Corporation

Hsin-Chih Chiu

Chih-Chiang Lu

Chun-Yu Lin

Yi-Ming Chen

Chien-Fu Huang

Shih-I Chen

Hao-Min Ku

You-Hsien Chang

Tzu-Chieh Hsu

Ching-Pei Lin

Ching-Huai Ni

Chia-Liang Hsu

Fu-Chun Tsai

Rong-Ren Lee

Yao-Ning Chan

Tzu Chieh Hsu

Ching-Yuan Tsai

Chun-Hsien Chang

Kuan-Chih Kuo

Chih-Hung Hsiao

Yi Ming Chen

A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Semiconductor light emitting device and method of fabricating the same

A semiconductor structure includes a substrate, an adhesion layer, arranged on the substrate, a first release layer, arranged on the adhesion layer and a first semiconductor device, including a semiconductor epitaxial stack, and a conducting structure directly connected to the first release layer. The first semiconductor device is not electrically connected to the substrate by the adhesion layer and the first release layer.

Method of selectively transferring semiconductor device

The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.

Method of manufacturing a light-emitting device

A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.

A method of transferring semiconductor devices from a first substrate to a second substrate, including providing the semiconductor devices which are between the first substrate and the second substrate. The semiconductor devices include a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof. The first semiconductor device and the second semiconductor device are moved from the first substrate by a picking unit. The picking unit, the first semiconductor device, and the second semiconductor device are moved close to the second substrate. The picking unit has a space apart from the second substrate. The first semiconductor device and the second semiconductor device are transferred from the picking unit to the second substrate. The he first semiconductor device and the second semiconductor device on the second substrate have a second gap between thereof. The first gap and the second gap are different.

Light-emitting device

The present disclosure provides a light-emitting device comprises a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first light-emitting layer separated from the topmost surface by a first distance; a second semiconductor stack arranged on the substrate, and comprising a second light-emitting layer separated from the topmost surface by a second distance; and a third semiconductor stack arranged on the substrate, and comprising third light-emitting layer separated from the topmost surface by a third distance; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights; and wherein the second distance is different form the first distance and the third distance.

Light-emitting device and manufacturing method thereof

A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.

Semiconductor light-emitting device

The present disclosure provides a light-emitting device including a substrate, a first block of semiconductor stack on the substrate, a second block of semiconductor stack on the substrate and a third block of semiconductor stack on the substrate. The first block of semiconductor stack includes a first emitting wavelength and a first surface away from the substrate. The second block of semiconductor stack on the substrate includes a second emitting wavelength and a second surface away from the substrate. The third block of semiconductor stack includes s a third emitting wavelength and a third surface away from the substrate. The second surface and the first surface are non-coplanar and the third surface and the first surface are coplanar. The first emitting wavelength, the second emitting wavelength and the third emitting wavelength are different.

The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.

Growing community of inventors

Hsinchu, Taiwan

Hsin-Chih Chiu