Epistar Corporation

Ireach Corporation

Hsin-Chan Chung

Wen-Luh Liao

Hung-Ta Cheng

Shih-Chang Lee

Yao-Ru Chang

Yi-Chieh Lin

Ching-Yuan Tsai

Chih-Chiang Lu

Chun-Yu Lin

Yung-Fu Chang

Shou-Lung Chen

Kuo-Feng Huang

Cheng-Hsing Chiang

Cheng-Feng Yu

Hsu-Hsuan Teng

Tzu-Chieh Hsu

Shih-I Chen

Rong-Ren Lee

Yu-Ren Peng

Yi-Ming Chen

Yao-Ning Chan

Chun-Fu Tsai

Hsiu-Ju Yang

A package structure includes: a substrate includes a first surface; a semiconductor chip disposed on the first surface; a support disposed on the first surface and surrounding the semiconductor chip comprises an electrical conducting member and penetrating the support; and an optical component disposed on the support and electrically connected to the substrate by the electrical conducting member.

Package structure

A semiconductor device includes a substrate, an epitaxial stack disposed on the substrate, a first connection layer between the epitaxial stack and the substrate and a first electrode disposed on the first connection layer. The substrate has a first side surface and a second side surface. The epitaxial stack has a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface. The first connection layer has a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface. The first electrode is in contact with the first protruding portion and the second protruding portion.

Laser device

A laser element includes a transparent substrate, a conductive layer on the transparent substrate, an adhesive layer, attached to the transparent substrate and having a first side surface, a laser unit, wherein the laser unit comprises a front conductive structure, attached to the adhesive layer and having a second side surface, a back conductive structure, which comprises a first detecting electrode and a second detecting electrode separated from the first detecting electrode, a passivation layer covering one of the first side surface and the second side surface, and first via holes extending from the back conductive structure to the conductive layer, wherein the first detecting electrode and the second detecting electrode are electrically connected to the conductive layer through the first via holes.

Laser element

The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.

Light-emitting device and manufacturing method thereof

A light-emitting device includes: a substrate comprising a first side; multiple semiconductor stacks on the first side and separated from each other, wherein each of the multiple semiconductor stacks comprises a light extraction area; multiple electrode pads on the multiple semiconductor stacks; and a blocking layer between one of the semiconductor stacks and the substrate. The multiple semiconductor stacks comprises a first semiconductor stack and a second semiconductor stack, and the first semiconductor stack and the second semiconductor stack are independently controlled to emit light.

Light-emitting device

A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.

Light emitting device

The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.

A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle &#x3b8;, a second curve having a second angle &#x3b8;and a third curve having a third angle &#x3b8;, wherein &#x3b8;

Semiconductor device

A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 &#x3bc;m, and the thickness of the lower semiconductor stack is small than or equal to 1 &#x3bc;m.

Growing community of inventors

Hsinchu, Taiwan

Hsin-Chan Chung