Taiwan Semiconductor Manufacturing Comp. Ltd.

Industrial Technology Research Institute

Hsien-Wen Chang

Chao-Hsin Chang

Jen-Yuan Hsu

Ming-Chien Tseng

Chih-Chien Hung

Jiunn-Jyi Lin

Shih-Hao Fang

Kuang-Hui Chang

Chih-Yu Chen

Sheng-Liang Pan

Jen-Shun Yang

Chih-Heng Shen

Chia-Hsiang Chen

Ying-Dar Lin

Chorng-Ren Sheu

Hsuan-Jung Su

Yu-Cheng Lin

Ching-Yung Chen

Chi-Shen Lo

Pei-Jan Wang

Ming-Hung Cheng

Chien-Fong Chen

Lih-Shyng Tsai

Kun-Yi Lin

Rann Shyan Yeh

Chia-Lin Lai

Wei-Shun Liao

Yen-Chang Chiu

Jan-Shin Ho

Kuei-Lung Chou

Jian-Ming Liao

Chang-Tai Chiao

Hsu-Tung Chien

Samer T Talat

Shahzoob Bilal Chundrigar

A base station includes a processing unit, a plurality of radio frequency units, a plurality of antenna units, a control unit and an adjustment unit. The processing unit generates a baseband signal and provides a control strategy. The radio frequency units receive the baseband signal to generate a plurality of radio frequency signals. The antenna units transmit a plurality of output signals. The control unit receives the control strategy and generates a plurality of control signals according to the control strategy. The adjustment unit receives the radio frequency signals and the control signals, switches the connection of RF paths with high-gain or low-gain between the radio frequency units and the antenna units and adjusts gains of the radio frequency signals according to the control signals, so as to generate the output signals.

Base station and operation method thereof and communication system

A communication system and operating method thereof are provided. The communication system includes an intelligent antenna unit which includes a plurality of antennas, an antenna selecting unit, one or more signal processing units and a control unit. The control unit is configured to: set one or more antenna-sectors from the antennas, each of the antenna-sectors includes one or more antennas selected from the antennas. And set a plurality of antenna-sector configurations, each of the antenna-sector configurations includes one or more sectors configured to the signal processing units, wherein the sectors are selected from the antenna-sectors. The control unit selects one of the antenna-sector configurations to operate communication transmission of a user equipment, and each signal processing unit configured to each sector of the selected antenna-sector configuration operating beam sweeping based on a number of antenna beam deployed to the configured each sector.

Communication system and operating method thereof

A wireless communication device with hybrid beamforming and a control method thereof are provided. The wireless communication device includes a plurality of antennas, a beamforming digital circuit, a plurality of radio frequency (RF) chains, a beamforming analog circuit, a controller and a storage. The RF chains receive signals processed by the beamforming digital circuit to generate antenna signals. The RF chains are connected to a part or all of the antennas through the beamforming analog circuit to transmit the antenna signal to the corresponding antennas. The number of the RF chains is smaller than the number of the antennas. The storage stores a plurality of candidate analog codebooks. The controller selects one of the candidate analog codebooks as a selected analog codebook according to scenario or environmental information, and adjusts the beamforming analog circuit according to the selected analog codebook.

Wireless communication device with hybrid beamforming and control method thereof

The disclosure proposes a routing message delivery method, a relay node using the same method, and a communication network using the same method. According to one of the exemplary embodiments, the proposed routing message delivery method would include at least but not limited to initiating a timer having a first timer value that is a non-zero positive number, forwarding a first routing message via a first path in response to receiving the first routing message before the timer expires, initiating a second routing message via the first path and a second path in response to not receiving the first routing message before the timer expires, constructing a current network topology, evaluating the first path and the second path within the current network topology, and updating the current network topology.

Routing message delivery method applicable to network node and network node using the same and communication network using the same

A method for network sharing of multiple network operators includes steps of: providing a network sharing management proxy device adapted to be disposed between a sharing access point (AP) and a plurality of core networks of the network operators, wherein the sharing AP allows one or more end user equipment (UE) of the network operators to access; receiving a control message by the network sharing management proxy device, wherein the control message is corresponding to an UE, and the UE is an end UE of a first network operator of the network operators; checking the control message to determine that the UE is corresponding to which one of the network operators, and generating tunneling information accordingly; and transmitting the control message to a first core network of the first network operator according to the tunneling information.

Method for network sharing of multiple network operators and network sharing management proxy device using the same

A method of coordination multi-point transmission is provided, which let a plurality of base stations perform communication with at least one access point of a vehicle. A first coordination multi-point set corresponding to a first position of the vehicle is obtained by looking up a database according to the first position. The first coordination multi-point set is a set of a plurality of first coordinated base stations among the plurality of base stations. A first beamforming weighted matrix correspondingly using by each of the plurality of first coordinated base stations is obtained by looking up the database. A coordination multi-point transmission is performed with the at least one access point of the vehicle by the each of the plurality of first coordinated base stations using the corresponding first beamforming weighted matrix of the each of the plurality of first coordinated base stations.

Method of coordination multi point transmission, control node and wireless communication device

According to one embodiment of a method for interference suppression in radio-over-fiber communication systems, the method uses a mode selection module to continuously update real time information of at least two mobile stations and determine to enter a cross mode or a single mode. In the single mode, when a mobile station approaches a switching point, a single mode command is issued to control at least one first specific remote antenna unit (RAU). In the cross mode, when an immediate cross condition is a new cross condition, a new cross mode table is generated, and when the position of any one mobile station of the at least two mobile stations cross a threshold, a cross mode command is issued to control at least one second specific RAU according to a corresponding cross mode table.

Method and apparatus for interference suppression in radio-over-fiber communication systems

A transmission method of a wireless signal including the following steps is provided. Multiple orthogonal frequency division multiplexing (OFDM) symbols carried by multiple subcarriers are generated according to a data signal. A scrambling pattern including multiple scrambling symbols is generated, wherein the scrambling symbols respectively correspond to the subcarriers in the frequency domain. The scrambling symbols corresponding to two contiguous subcarriers are correlated. The scrambling symbols are utilized to encode the OFDM symbols carried by the corresponding subcarriers.

Transmission method of wireless signal and transmitter using the same

A method and metal test pattern for monitoring metal corrosion susceptibility for integrated circuit wafers. Test patterns having an array of metal circles to simulate contact regions, an array of metal strips to simulate electrode regions, and a blanket metal layer to simulate bulk metal regions are formed. A first number of defects per unit area for the test patterns is measured, using a defect scan system. The test pattern wafers are then subjected to environmental stress conditions for a first time and a second number of defects per unit area for the test patterns is measured, again using a defect scan system. The difference between the second number and the first number is compared with a critical number. If excessive corrosion occurs the process for producing wafers is corrected before continuing to process product wafers.

Test pattern for monitoring metal corrosion on integrated circuit wafers

Method for monitoring metal corrosion on integrated circuit wafers

The present invention provides a method of manufacturing an interlevel dielectric layer (ILD) which has reduced precipitates after an etch back of the borophosphosilicate glass (BPSG) ILD layer. A dielectric layer containing boron and phosphorous is deposited on the substrate. A reflow process is performed on the dielectric layer at a temperature in a range of between about 800.degree. and 950.degree. C. The dielectric layer is etched back using a reactive ion etch. In an important step, a surface treatment is performed on the dielectric layer thorough a plasma treatment. A plasma source gas for the surface treatment is of a gas selected from the group consisting of Ar, NO.sub.2, N.sub.2, and O.sub.2, at a temperature in a range of between about 250.degree. and 400.degree. C. at a pressure in a range of between about 1 mtorr and 5 torr, at a RF power in a range of between about 300 and 400 watts, and for a time in a range of between about 15 and 80 seconds.

Method for reducing precipitate defects using a plasma treatment post

A simple, non critical, low cost process step is added to the manufacture of integrated circuit wafers to remove a ridge of dielectric material remaining at the flat edge of the wafer after an edge rinse has removed the ridge of dielectric from the circular edges of the wafer. A layer of dielectric, such as Spin-On-Glass or the like, is formed on the wafer. An edge rinse is then used to remove the ridge of dielectric formed at the wafer edge, however the edge rinse does not remove the ridge of dielectric at the flat edge of the wafer. A layer of photoresist is formed on the wafer, selectively exposed, and developed to form a photoresist mask. The flat edge of the wafer is then dipped in buffered oxide etch to remove the dielectric material at the flat edge of the wafer. The photoresist mask is then stripped and processing of the wafer is continued. Damage to dielectric material at the flat edge of the wafer, which can cause particles to flake off and become a source of defects in subsequent process steps, in thereby avoided.

Process to avoid dielectric damage at the flat edge of the water

A new method of forming the intermetal dielectric layer of an integrated circuit is described. A thick insulating layer is formed over semiconductor device structures in and on a semiconductor substrate. A first metal layer is deposited over the thick insulating layer. The first metal layer is etched using conventional photolithography and etching techniques to form the desired metal pattern on the surface of the thick insulating layer. The intermetal dielectric layer is formed by first covering the patterned first metal layer with a layer of silicon oxide. The silicon oxide layer is covered with a layer of spin-on-glass material which is cured. A second layer of silicon oxide completes the intermetal dielectric layer. Via openings are formed through the intermetal dielectric layer to the underlying patterned first metal layer. A vacuum bake removes moisture from the exposed spin-on-glass layer within the via opening. A nitrogen plasma treatment converts the exposed spin-on-glass layer from an organic to an inorganic material. The inorganic spin-on-glass material has less moisture absorption and suppresses outgassing from the rest of the organic spin-on-glass layer, thus preventing poisoned via metallurgy. A second metal layer is deposited overlying the intermetal dielectric layer and within the via openings and fabrication of the integrated circuit is completed.

Solving the poison via problem by adding N.sub.2 plasma treatment after

A method is described for forming tapered contact via holes in large scale integrated circuit structures which avoids the formation of a re-entrance profile. The re-entrance profile can form at the entrance to the contact via hole when a dry etch is used as a first etching step by redepositing material removed during the dry etch at the entrance of the contact via hole. This re-entrance profile makes the angle of entrance into the contact via hole greater than 90.degree. and the step coverage of metal filling the hole poor. This invention uses wet etching with a greater lateral etch rate than vertical etch rate as a first etching step in the formation of the contact via hole and avoids the formation of the re-entrance profile. The edges of the resulting contact via hole are smooth and the entrance angle into the contact via hole is substantially less than 90.degree.. The step coverage of metal later filling the contact via hole is substantially improved.

Taper etching without re-entrance profile

An improved method is described for planarizing dielectric layers which are formed between conductor layers in integrated circuits A three layer spin-on-glass sandwich is formed comprising a first silicon oxide layer, a spin-on-glass layer and a second silicon oxide layer. The improvement comprises performing an O.sub.2 plasma treatment on the first silicon oxide layer prior to forming the overlying spin-on-glass layer. The method prevents delamination (separation) between the first silicon oxide layer and the middle spin-on-glass layer.

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Hsinchu, Taiwan

Hsien-Wen Chang