Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsien-Wei Chin

Wen-Ting Chu

Yu-Hsiung Wang

Eric Chen

Chih-Ming Chen

Chao-Hsiung Wang

Chwen-Ming Liu

Hung-Che Liao

Jenn-Ming Huang

Hung-Chih Chen

Jang-Cheng Hsieh

Niahn-Mauh Shih

Huan-Chung You

A method for making a semiconductor device by reshaping a silicon surface with a sacrificial layer is presented. In the present invention the steps of forming a sacrificial dielectric layer and removing the sacrificial dielectric layer are repeated multiple times in order to remove sharp edges from the silicon surface near the field oxides. Another aspect of the present invention includes making a MOSFET transistor that incorporates the forming and removing of multiple sacrificial layers into the process.

Method for reshaping silicon surfaces with shallow trench isolation

Detecting decay of equipment lens anti-reflective coating (ARC) by detecting undesired residue is disclosed. The undesired residue detected correlates with the decay of the ARC, where a greater amount of undesired residue detected indicates a greater level of the decay. The undesired residue is detected due to stray light reflected by the ARC because of its decay. In the context of semiconductor fabrication equipment, photoresist residue results from negative photoresist on a semiconductor wafer, and may be viewed on one or more scribe lines of a mask within a field of view of the lens of the semiconductor fabrication equipment.

Detection of lens anti-reflective coating decay by undesired residue detection

The present invention is a method for preventing backside polysilicon peeling in 4T+2R SRAM process. This invention utilizes forming oxide cap layer on the backside of the wafer to protect the backside polysilicon. Thus, the backside polysilicon is free from peeling and damage.

Method for preventing backside polysilicon peeling in a 4T+2R SRAM

A method is provided for improving the performance characteristics of the MOS devices contained within an integrated circuit that has been subjected to a rapid thermal anneal. After the rapid thermal anneal the integrated circuit is heated for more than about 30 minutes at a temperature of more than about 430.degree. C. in a gaseous atmosphere that contains hydrogen, typically forming gas.

Method for a MOS device manufacturing

Growing community of inventors

Hsinchu, Taiwan

Hsien-Wei Chin