Mosel Vitelic Corporation

Hsien-Liang Meng

Pei-Jan Wang

Yung-Tsun Lo

Yeong-Ruey Shiue

Yeong Rvey Shiue

Elvis Huang

The present invention relates to a method of forming a barrier metal layer for a hot Al plug and its structure and more particularly to remarkably ameliorate the performance of a barrier metal layer preventing Al metal used as an interconnection layer from diffusing into a silicon substrate. A barrier metal layer according to the present invention is a stacked structure comprising a top layer of Tungsten (W) formed by a Chemical Vapor Deposition (CVD) method and a bottom layer of TiN. Then, a Al interconnection layer deposited at high temperature fills a plug and finishes a plug structure having advantages of low manufacturing cost and full prevention of Al diffusion.

Method of forming a TiN/W barrier layer for a hot Al plug

The present invention relates to a method of a sequencial WSi/.alpha.-Si sputtering process, more particularly to a method of in-situ wafer cooling for a sequencial WSi/.alpha.-Si sputtering process. A sputtering process of WSi and a sputtering process of .alpha.-Si are finished in a multi-chamber sputtering apparatus according to the invention; meanwhile, a wafer is cooled down by bolwing of inert gas before a process of sputtering .alpha.-Si starts. Thus, compared to traditional art of finishing WSi/.alpha.-Si sputtering in two apparatus, partial time of vacuuming and venting required in a sputtering process is saved according to the invention, thereby, shortening the production cycle time, reducing the possibility of wafer contamination, and suppressing the fabricating cost.

Growing community of inventors

Hsin-Chu, Taiwan

Hsien-Liang Meng