Other

Tsai, Shiann-tsong

Tsai Huang, Yen-mei

Tsai, Hsien-chou

Tsai, Hsien-wei

Hsien-Chou Tsai

Chung-Che Tsai

A semiconductor package includes a substrate having a semiconductor chip disposed on a top surface of the substrate, a ground ring surrounding the semiconductor chip on the top surface of the substrate, a metal-post reinforced glue wall disposed on the ground ring to surround the semiconductor chip, and a molding compound disposed only inside the metal-post reinforced glue wall and covering the semiconductor chip. The metal-post reinforced glue wall comprises a magnetic or magnetizable filler so as to form an active electro-magnetic compatibility (EMC) shielding.

Semiconductor package with in-package compartmental shielding and active electro-magnetic compatibility shielding

A semiconductor package includes a substrate having at least one semiconductor chip on a top surface of the substrate; a ground ring, on the top surface of the substrate, surrounding the at least one semiconductor chip; a metal-post reinforced glue wall disposed on the ground ring, surrounding the at least one semiconductor chip; a molding compound surrounding the at least one semiconductor chip, wherein a rear surface of the at least one semiconductor chip is flush with an upper surface of the molding compound; a conductive layer disposed on the molding compound and in direct contact with the rear surface of the semiconductor chip and the metal-post reinforced glue wall; a solder layer disposed on the conductive layer; and a heat sink disposed on the solder layer.

Semiconductor package with in-package compartmental shielding and improved heat-dissipation performance

A semiconductor package includes a substrate. A high-frequency chip and a circuit component susceptible to high-frequency interference are disposed on a top surface of the substrate. A first ground ring is disposed on the substrate around the high-frequency chip. A first metal-post reinforced glue wall is disposed on the first ground ring to surround the high-frequency chip. A second ground ring is disposed on the top of the substrate around the circuit component. A second metal-post reinforced glue wall is disposed on the second ground ring to surround the circuit component. Mold-flow channels are disposed in the first and second metal-post reinforced glue walls. A molding compound covers at least the high-frequency chip and the circuit component. A conductive layer is disposed on the molding compound and is coupled to the first metal-post reinforced glue wall and/or the second metal-post reinforced glue wall.

Growing community of inventors

Taipei, Taiwan

Hsien-Chou Tsai