Chang Gung University

Hsien-Chin Chiu

Liann-Be Chang

Yung-Hsiang Lin

Chao-Sung Lai

Ray-Ming Lin

Bing-Shan Hong

Che-Kai Lin

Yuan-Chang Huang

Chung-Wen Chen

Chao-Wei Lin

Wei-Hsien Lee

S E Chow

Hsin-Shun Huang

An oxidized low density lipoprotein sensing device for a gallium nitride process is a GaN HEMT device including: a gateless AlGaN/GaN sensing transistor device, a testing window, a source, a drain, two metal connecting wires and a passivation layer. The gateless AlGaN/GaN sensing transistor device has an epitaxial wafer structure including a GaN layer and an aluminum gallium nitride layer. The testing window is disposed on the epitaxial wafer structure. The metal connecting wire is disposed on a source and a drain. The passivation layer is covered onto a surface of the sensing device except the testing window. A built-in piezoelectric field is created by the properties of FET and the polarization effect of AlGaN/GaN to achieve the effect of sensing the level of oxidizing proteins in human body quickly, accurately and easily.

Oxidized low density lipoprotein sensing device for gallium nitride process

A multi-layer structure with a transparent gate includes a MHEMT device structure comprising a GaAs substrate, a Schottky layer and a cap layer formed on the Schottky layer; a transparent gate formed on the Schottky layer being an indium tin oxide, ITO; and a drain and a source formed on the cap layer. Moreover, the MHEMT device structure includes a graded buffer, a buffer layer, a first spacer layer, a channel layer, and a second spacer layer formed between the GaAs substrate and the Schottky layer in a stacked fashion. The multi-layer structure is a transparent gate HEMT employing indium tin oxide which can make HEMT more sensitive to the light wave.

Multi-layer structure with a transparent gate

This invention relates to a method of sulfuration treatment for InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT), and the sulfuration treatment is applied to the InAlAs/InGaAs MHEMT for a passivation treatment for Gate, in order to increase initial voltage, lower the surface states and decrease surface leakage current, which makes the MHEMT work in a range of high current density and high input power.

Method of sulfuration treatment for a strained InAlAs/InGaAs metamorphic high electron mobility transistor

Growing community of inventors

Taipei, Taiwan

Hsien-Chin Chiu