Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsien-Chang Hsieh

Chun-Chih Lin

Chune-Te Yang

Tah-Te Shih

Yu-Jen Su

Wen-Hsong Wu

An exhaust structure includes a piping section, wherein the piping section has a first inner diameter in a central region of the piping section, the piping section has a second diameter in at least one of an inlet or an outlet, and the second diameter has a same value as the first inner diameter. The exhaust structure further includes a plurality of smoothing layers configured to resist turbulence and condensation produced by a flow of one or more gasses in the piping section.

Exhaust system and process equipment

An exhaust structure includes an intake section which includes an inlet, an output section which includes an outlet, and a piping section coupled to the intake section and the output section at a section interface. The piping section includes a first inner diameter from the intake section to the output section, wherein one of the intake section or the output section has a second inner diameter at the section interface. The second inner diameter includes a same value as a value of the first inner diameter. A plurality of smoothing layers are configured to resist turbulence and condensation produced by a flow of one or more gasses in the intake section, the output section, and the piping section.

Thermal chamber exhaust structure and method

An exhaust structure includes an intake section including a first high thermal conductivity material, the intake section having an inlet, an output section including a second high thermal conductivity material, the output section having an outlet, and a piping section including a third high thermal conductivity material, the piping section being configured to communicatively couple the intake section with the output section. The exhaust structure provides a high thermal conductivity path from the inlet to the outlet, the high thermal conductivity path including the first high thermal conductivity material, the second high thermal conductivity material, and the third high thermal conductivity material.

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Hsinchu, Taiwan

Hsien-Chang Hsieh