Delta Electronics, Inc.

Hsieh-Shen Hsieh

Huang-Kun Chen

Tai-Kang Shing

Horng-Jou Wang

Cheng-Chang Lee

Heng-Chung Chang

Chao-Jui Liang

Zong-Ting Yuan

Chao-Qing Wang

Chia-Yi Chu

Chuan-Wei Wang

Ting-Yi Chung

Chih-Ming Sun

Wei-Leun Fang

Shiang-Cheng Lu

A passive alternating current sensor for sensing a current-carrying conductor is disclosed. The passive alternating current sensor includes a substrate, a magnetic body, at least one coil and a first measuring circuit. The substrate has a flexible structure layer. The magnetic body is disposed correspondingly to the current-carrying conductor and located at one side of the substrate. The coil is disposed on the substrate and correspondingly winds around the magnetic body. The first measuring circuit is connected with the coil. When the magnetic body is subjected to the magnetic field generated by the current-carrying conductor and enabled a relative motion with the coil, the coil produces an induced electromotive force. The first measuring circuit measures the induced electromotive force and accordingly outputs a first induction signal.

Passive alternating current sensor

A micro-electromechanical device includes a substrate, a first patterned conductive layer, a second patterned conductive layer and a first patterned blocking layer. The first patterned conductive layer is disposed on the substrate. The second patterned conductive layer is disposed on the first patterned conductive layer. The first patterned blocking layer is connected with the first patterned conductive layer and the second patterned conductive layer. In addition, a method of manufacturing the micro-electromechanical device is also disclosed.

Micro-electromechanical device and manufacturing method thereof

A capacitance sensing structure includes a substrate, a sensing electrode layer, at least one stack layer and a conductive body. The sensing electrode layer is formed on or in the substrate. The stack layer is formed on the sensing electrode layer. The conductive body is disposed over and corresponding to the sensing electrode layer and the stack layer.

Capacitance sensing structure

A semiconductor piezoresistive sensor, which is electrically connected with a circuit, includes a semiconductor base, at least one piezoresistive element and a conductive layer. The semiconductor base includes a diaphragm and a base. The base is disposed adjacent to and around the diaphragm. The piezoresistive element is formed in the diaphragm and is electrically connected with the circuit. The conductive layer is electrically connected with the diaphragm.

Semiconductor piezoresistive sensor and operation method thereof

An accelerometer includes a fixing unit and a movable unit. The fixing unit has a plurality of first electrode parts and a plurality of second electrode parts. The movable unit is connected with the fixing unit and includes a body having an opening, a plurality of third electrode parts and a plurality of fourth electrode parts. The third electrode parts are disposed at an outer side of the body with respect to the first electrode parts, respectively. The fourth electrode parts are disposed at the inner side of the body in the opening, and are disposed respectively with respect to the second electrode parts, respectively.

Accelerometer

Growing community of inventors

Taoyuan Hsien, Taiwan

Hsieh-Shen Hsieh