Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsiao-Yin Lin

Chyi-Tsong Ni

Jen-Hao Liu

Chung-Min Lin

An embodiment of the disclosure provides a semiconductor device. The semiconductor device includes a plurality of metallization layers comprising a topmost metallization layer. The topmost metallization layer has two metal features having a thickness Tand being separated by a gap. A composite passivation layer comprises a HDP CVD oxide layer under a nitride layer. The composite passivation layer is disposed over the metal features and partially fills the gap. The composite passivation layer has a thickness Tabout 20% to 50% of the thickness T

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Hsinchu, Taiwan

Hsiao-Yin Lin