Xilinx, Inc.

Hsiao H Chen

Subodh Kumar

Uma E Durairajan

Michelle Zeng

Tao Peng

Santosh Yachareni

Weiguang Lu

Circuits and methods for initializing a memory. Each row of the memory includes data bits and associated parity bits. A write buffer contains bit values for initializing the memory, and a control circuit performs a first set of write operations that write values from the write buffer to the data bits of the memory without writing values to the associated parity bits. The write buffer performs a second set of write operations that write values from the write buffer to the parity bits associated with the data bits without writing data to the data bits.

Memory initialization

An apparatus relates generally to a clock generator is disclosed. The clock generator is coupled to receive an input clock signal and further coupled to provide an output clock signal. An address and control register is coupled to receive an address signal and the output clock signal. An access generator is coupled to receive the output clock signal. The clock generator includes: an input node coupled to receive the input clock signal; at least one pulse generator coupled to the input node to receive the input clock signal and further coupled to provide a clock control signal; and a control gate coupled to the input node to receive the input signal and further coupled to the at least one pulse generator to receive the clock control signal. The clock control signal is provided in a non-toggling state for a high-frequency mode and in a toggling state for a low-frequency mode.

Bimodal clock generator

A data value is read from one port of a dual-port memory cell during a clock cycle. A WRITE assist pulse having a delay from an end-of-read signal is generated. The delay and duration of the WRITE assist pulse are optionally user-selectable. A high voltage (e.g., Vdd) is coupled to the bitlines (e.g., BL-A, BLc-A) of the first port during the WRITE assist pulse, and a low voltage value (e.g., zero) is written to the memory cell through the second port (e.g., BL-B, BLc-B) during the clock cycle.

Dual port memory with write assist

A static random access memory (SRAM) can include a plurality of columns forming a memory array, wherein each column comprises a plurality of memory cells coupled to bitlines and wordlines, and a write replica circuit generating a signal when data has been written to the write replica circuit. A wordline of the memory array is turned off responsive to the signal. The write replica circuit can include an additional column comprising at least one dual port dummy memory cell, and write detection circuitry coupled to the dual port dummy memory cell detecting when data has been written to the dual port dummy memory cell and responsively generating the signal. The signal generated by the write detection circuitry indicates a successful write operation to the dual port dummy memory cell.

Desensitizing static random access memory (SRAM) to process variations

A static random access memory (SRAM) can include an array of memory cells, wherein each memory cell is coupled to one of a plurality of sense amplifiers through a bitline. The SRAM also can include replica bitline circuitry including a replica bitline coupled to a replica bitline amplifier. The replica bitline amplifier can provide a strobe signal to the plurality of sense amplifiers, wherein the replica bitline amplifier includes a feedback path. An SRAM also may include a write replica circuit generating a signal when data has been written to the write replica circuit. A wordline of the memory array can be turned off responsive to the signal.

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Campbell, CA, United States of America

Hsiao H Chen