Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsiao Ching-Wen

Dian-Hau Chen

Hsiang-Ku Shen

Yao-Chun Chuang

Yuan-Yang Hsiao

Ming-Da Cheng

Chun-Hung Chen

Wei Sen Chang

Hong-Seng Shue

Wei-Han Chiang

Ching-Ho Cheng

An organic interposer includes interconnect-level dielectric material layers embedding redistribution interconnect structures, at least one dielectric capping layer overlying a topmost interconnect-level dielectric material layer, a bonding-level dielectric layer overlying the at least one dielectric capping layer, and a dual-layer inductor structure, which may include a lower conductive coil embedded within the topmost interconnect-level dielectric material layer, a conductive via structure vertically extending through the at least one dielectric capping layer, and an upper conductive coil embedded within the bonding-level dielectric layer and comprising copper.

Organic interposer including a dual-layer inductor structure and methods of forming the same

A metal-insulator-metal (MIM) structure and methods of forming the same for reducing the accumulation of external stress at the corners of the conductor layers are disclosed herein. An exemplary device includes a substrate that includes an active semiconductor device. A stack of dielectric layers is disposed over the substrate. A lower contact is disposed over the stack of dielectric layers. A passivation layer is disposed over the lower contact. A MIM structure is disposed over the passivation layer, the MIM structure including a first conductor layer, a second conductor layer disposed over the first conductor layer, and a third conductor layer disposed over the second conductor layer. A first insulator layer is disposed between the first conductor layer and the second conductor layer. A second insulator layer is disposed between the second conductor layer and the third conductor layer. One or more corners of the third conductor layer are rounded.

Metal plate corner structure on metal insulator metal

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Hsinchu, Taiwan

Hsiao Ching-Wen