Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsiao-Chin Tuan

Ming-Ta Lei

Chih-Wen Yao

Liang-Yu Su

Various embodiments of the present disclosure are directed towards an integrated chip including a first doped region in a substrate and comprising a first doping type. A gate structure is over the first doped region. A pair of contact regions are in the substrate on opposing sides of the gate structure and comprising the first doping type. The first doped region continuously laterally extends between the pair of contact regions and contacts the pair of contact regions. A second doped region is in the substrate and along a bottom of the first doped region. The second doped region comprises a second doping type opposite the first doping type.

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Ju Dong County, Taiwan

Hsiao-Chin Tuan