Shenzhen China Star Optoelectronics Technology Co., Ltd.

Hsiangchih Hsiao

Mian Zeng

Shengdong Zhang

Bo Sun

Hongyuan Xu

Xiaoxiao Wang

Yangling Cheng

Changi Su

A complementary thin film transistor and manufacturing method thereof are provided. The complementary thin film transistor has a substrate, an n-type semiconductor layer, a p-type semiconductor layer, and an etched barrier layer. The substrate defines an n-type transistor region and a p-type transistor region adjacent to the n-type transistor region. The n-type semiconductor layer is disposed on the substrate and within the n-type transistor region, and has a metal oxide material. The p-type semiconductor layer is disposed on the substrate and within the p-type transistor region, and has an organic semiconductor material. The etched barrier layer is formed on the n-type semiconductor layer and disposed within the n-type transistor region and the p-type transistor region, and the p-type semiconductor layer is formed on the etched barrier layer.

Complementary thin film transistor and manufacturing method thereof

A complementary thin film transistor and manufacturing method thereof are provided. The complementary thin film transistor has a substrate, an n-type semiconductor layer, a p-type semiconductor layer, a first passivation layer, a first electrode metal layer, and a second electrode metal layer. The n-type semiconductor layer is disposed above the substrate, and comprises a metal oxide material. The p-type semiconductor layer is disposed above the substrate, and comprises an organic semiconductor material. The first passivation layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer, and formed with at least one contacting hole. The first electrode metal layer and the second electrode metal layer are electrically connected with each other through the contacting hole.

The present invention provides a manufacture method of a TFT array substrate and a TFT array substrate structure, and the TFT array substrate structure comprises a substrate (), a first metal electrode () on the substrate (), a gate isolation layer () positioned on the substrate () and completely covering the first metal electrode (), an island shaped semiconductor layer () on the gate isolation layer (), a second metal electrode () on the gate isolation layer () and the island shaped semiconductor layer (), a protecting layer () on the second metal electrode (), a color resist layer () on the protecting layer (), a protecting layer () on the color resist layer () and a first pixel electrode layer () on the protecting layer (); a via () is formed on the protecting layer (), the color resist layer () and the protecting layer (), and an organic material layer () fills the inside of the via ().

Manufacture method of TFT array substrate and TFT array substrate sturcture

The present invention provides a method for manufacturing a thin-film transistor and a thin-film transistor manufactured with same. The method includes (1) providing a substrate; (2) forming a first metal layer on the substrate and applying a masking operation to form a gate terminal; (3) forming a gate insulation layer on the gate terminal; (4) forming an oxide semiconductor layer on the gate insulation layer and forming a second metal layer on the oxide semiconductor layer, wherein the second metal layer includes a titanium layer formed on the oxide semiconductor layer and a copper layer formed on the titanium layer and is subjected to a masking operation to form a data line and source/drain terminal; and (5) forming a transparent conductive layer on the second metal layer and applying a masking operation to patternize the transparent conductive layer to form the thin-film transistor.

Growing community of inventors

Guangdong, China

Hsiangchih Hsiao